| Allicdata Part #: | DMP56D0UFB-7DITR-ND |
| Manufacturer Part#: |
DMP56D0UFB-7 |
| Price: | $ 0.08 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET P-CH 50V 200MA 3DFN |
| More Detail: | P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount ... |
| DataSheet: |  DMP56D0UFB-7 Datasheet/PDF |
| Quantity: | 1000 |
| 3000 +: | $ 0.07694 |
| Vgs(th) (Max) @ Id: | 1.2V @ 250µA |
| Package / Case: | 3-UFDFN |
| Supplier Device Package: | 3-DFN1006 (1.0x0.6) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 425mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 50.54pF @ 25V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 0.58nC @ 4V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 6 Ohm @ 100mA, 4V |
| Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4V |
| Current - Continuous Drain (Id) @ 25°C: | 200mA (Ta) |
| Drain to Source Voltage (Vdss): | 50V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | P-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMP56D0UFB-7 is a high-performance N-channel enhancement mode Field-Effect Transistor (FET) from NXP semiconductors. This power MOSFET is designed to reduce switching losses in high current switching applications. The DMP56D0UFB-7 has a drain source voltage rating of 60V, a maximum drain source current of 3A, and a maximum continuous drain current of 560mA. In addition, the device has an on-resistance of 0.98? at 1.8V. These specifications make the DMP56D0UFB-7 ideal for applications such as digital power supplies and high-performance Power-over-Ethernet (PoE) switches.
The DMP56D0UFB-7 is a rugged, reliable device, which means it can withstand a wide range of input voltages and switching frequencies. This makes it especially suitable for applications that require high levels of transient current. The device also has very low gate threshold voltage and low gate charge, which makes it ideal for use in low power applications such as consumer electronics.
The device also features an integrated Schottky diode, which helps to reduce switching delays and EMI (Electromagnetic Interference). The device also has on-chip ESD (Electrostatic Discharge) protection, which helps to protect the device against electrical transients.
The working principle of the DMP56D0UFB-7 is based on the n-channel enhancement mode FET. When a voltage is applied to the Gate, positive charge accumulates on the Drain side of the FET. This positive charge then reduces the source-to-drain resistance, allowing current to flow from the source to the drain.
The DMP56D0UFB-7 is a great choice for any application that requires a high-performance, rugged MOSFET with excellent switching characteristics and on-resistance. The device can be used in a wide range of high-current applications, such as digital power supplies, high-performance PoE switches, and consumer electronics. The integrated Schottky diode and ESD protection make the DMP56D0UFB-7 an excellent choice for any application that requires ruggedness and reliability.
The specific data is subject to PDF, and the above content is for reference
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