DMP57D5UFB-7 Allicdata Electronics
Allicdata Part #:

DMP57D5UFB-7DITR-ND

Manufacturer Part#:

DMP57D5UFB-7

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CH 50V 200MA 3-DFN
More Detail: P-Channel 50V 200mA (Ta) 425mW (Ta) Surface Mount ...
DataSheet: DMP57D5UFB-7 datasheetDMP57D5UFB-7 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Package / Case: 3-UFDFN
Supplier Device Package: 3-DFN1006 (1.0x0.6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 425mW (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 29pF @ 4V
Vgs (Max): ±8V
Series: --
Rds On (Max) @ Id, Vgs: 6 Ohm @ 100mA, 4V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drain to Source Voltage (Vdss): 50V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The DMP57D5UFB-7 is a high-performance, dual-channel field-effect transistor (FET). It is a metal-oxide-semiconductor FET (MOSFET) designed for specific applications. The device is commonly used in analog and switching power supply, motor drive, and other power switches.

A field-effect transistor is an active electronic device that is used to amplify or switch electronic signals. It may consist of one or multiple transistors and is usually composed of a semiconductor material. The primary benefit of FETs compared to conventional bipolar junction transistors is their superior switching speed and low power consumption. This makes them ideal for usage in high-speed digital applications.

The DMP57D5UFB-7 is a single-ended FET, which means that it is operated as a single-ended device in terms of its input and output characteristics. It has an output impedance of 10 ohms and a maximum gate threshold voltage of 8 volts. It is capable of providing a maximum output current of 20 amps. The device is made of silicon and has a maximum junction temperature of 175°C.

In terms of its application field, the DMP57D5UFB-7 is typically used as a switch in electronic devices, especially in high-power applications. For example, it can be used as a power switch in electric cars, computers, and other high-power electronics. Additionally, it is often found in switching power supplies, motor drives, and other power electrical systems.

The working principle of the DMP57D5UFB-7 is based on two basic principles: the principle of operation of a field-effect transistor and the principle of operation of a MOSFET. The field-effect principle involves the application of a voltage to the gate terminal of the device to induce a change in the electrical characteristics of the channel region between the source and drain terminals. The MOSFET principle involves the application of an electric field, which allows charge carriers to flow between the source and drain terminals, resulting in an electrical current. The voltage applied to the gate controls the amount of current that can flow between the source and drain terminals.

In summary, the DMP57D5UFB-7 is a single-ended FET that is best used in high-power applications. It has an output impedance of 10 ohms, an 8-volt maximum gate threshold voltage, and a maximum output current of 20 amps. The device is based on two principles: the field-effect principle and the MOSFET principle. The voltage applied to the gate controls the amount of current that can flow between the source and drain terminals.

The specific data is subject to PDF, and the above content is for reference

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