Allicdata Part #: | DMPH6050SSDQ-13-ND |
Manufacturer Part#: |
DMPH6050SSDQ-13 |
Price: | $ 0.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET 2 P-CHANNEL 5.2A 8SO |
More Detail: | Mosfet Array 2 P-Channel (Dual) 5.2A (Ta) Surfac... |
DataSheet: | DMPH6050SSDQ-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.22586 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 P-Channel (Dual) |
FET Feature: | Standard |
Current - Continuous Drain (Id) @ 25°C: | 5.2A (Ta) |
Rds On (Max) @ Id, Vgs: | 48 mOhm @ 5A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 14.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 1525pF @ 30V |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
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The DMPH6050SSDQ-13 is a dual-N-channel powerMosfet, specifically designed to provide superior efficiency in power handling capabilities. It is an array of two large-die N-channel powerMosfet with a small surface mount package. This package includes two N-channel MOSFETs, with a maximum drain to source on-state resistance of 625 mohm at 10V and a maximum on-state drain current of 1.2A. It is designed to provide superior low-voltage switching efficiency in applications that require high-shift power handling capabilities. It is ideal for power supply, audio amplifier, motor control, and LED lighting applications.
The DMPH6050SSDQ-13 is manufactured using advanced high voltage process technology and is designed for ease of use, especially when it comes to high power operation. This device has an adjustable threshold voltage from 1.2V to 2V, and an operating temperature range of -55°C to 125°C. It can be directly mounted to any printed circuit board and provides superior power handling capabilities, allowing it to effectively handle up to 3A of current.
The DMPH6050SSDQ-13 utilizes a common source drain structure that provides superior performance when it comes to both on-state resistance and gate charge characteristics. It also has an internal source-blocking gate that prevents accidental gate turn-on failure. This makes it an ideal choice for use in applications that require high power handling capabilities. In addition, the device also has a built-in over temperature protection and an over-current protection for improved safety and reliability.
The working principle of DMPH6050SSDQ-13 is based on the basic Gate- Source-Drain structure. When a voltage is applied to the Gate terminal, a current is allowed to flow between the Source and Drain terminals. This action can be controlled by changing the bias voltage applied to the Gate terminal. When higher drain currents are required, a higher voltage must be used in order to increase the gate-source voltage and thus allow higher current flow.
The DMPH6050SSDQ-13 is typically used in power supply, audio amplifier, motor control, and LED lighting applications. It is also ideal for use in prototyping, as well as applications that require high-shift power handling capabilities. It is available in an adjustable source-blocking gate, allowing users to adjust the threshold voltage from 1.2 to 2.0V. It is also manufactured using advanced process technology that allows it to operate at a low on-state drain current of 1.2A, making it an ideal solution for low-voltage, high-power applications.
In conclusion, the DMPH6050SSDQ-13 is a dual-N-channel powerMosfet, specifically designed to provide superior efficiency in power handling capabilities. It is ideal for use in power supply, audio amplifier, motor control, and LED lighting applications, as well as prototyping and other high-shift power handling applications. It features an adjustable threshold voltage from 1.2V to 2V and an operating temperature range of -55°C to 125°C. It is manufactured using an advanced high voltage process technology that allows it to effectively handle up to 3A of current.
The specific data is subject to PDF, and the above content is for reference
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