Allicdata Part #: | DMPH4015SK3-13-ND |
Manufacturer Part#: |
DMPH4015SK3-13 |
Price: | $ 0.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CHANNEL 40V 45A TO252 |
More Detail: | P-Channel 40V 45A (Tc) 3.3W (Ta) Surface Mount TO-... |
DataSheet: | DMPH4015SK3-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.29415 |
Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 3.3W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4234pF @ 20V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 11 mOhm @ 9.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 40V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMPH4015SK3-13 is a single N-Channel enhancement mode high voltage process field-effect transistor (FET) designed for high frequency indirect ionisation sensing. This particular product is made by STMicroelectronics and is suited for high speed switching applications. Though it is an enhancement mode FET, it is still fast enough for use in power switching and low voltage level converter circuits. The DMPH4015SK3-13 is designed to withstand up to 30V. It can handle up to 3A and has a maximum drain to source on-state resistance of 320 milliohms.
This FET operates on the principle of a channel that forms between the source and drain when a negative gate voltage is applied. When the negative voltage is applied, the channel that forms allows current to flow through the FET, turning it on. When the voltage is removed, the FET turns off and no current flows. This principle makes the FET highly efficient and allows it to switch quickly.
The DMPH4015SK3-13 is suitable for use in high speed switching applications where low on-state resistance and high gate voltage are critical. It is also well suited for level shifters and low power radio frequency (RF) conditioning circuits. In addition to its low on-state resistance and high gate voltage capabilities, the DMPH4015SK3-13 is also a low cost option for high speed switching applications.
The DMPH4015SK3-13 is capable of handling up to 3A, making it well suited for high power switching circuits. It is also capable of withstanding up to 30V, making it suitable for both power and signal conditioning applications. Additionally, its low on-state resistance of 320 milliohms ensures that it can handle large currents without introducing significant losses.
In addition to its wide array of applications, the DMPH4015SK3-13 also has a number of advantages over other FETs. It is a smaller, sleeker package than most similar FETs, which makes it well suited for small, space-constrained applications. It also offers a low technical risk and high reliability, making it an attractive option for applications that require high performance and low power consumption. Finally, the DMPH4015SK3-13 is a low-cost solution, making it a great choice for cost-sensitive projects.
In conclusion, the DMPH4015SK3-13 is a great option for high speed switching applications that require low on-state resistance and high gate voltage. Its small size, low technical risk, and low cost make it an attractive choice for applications requiring high reliability and performance. With its wide array of applications and advantages, the DMPH4015SK3-13 is sure to be an integral part of many high tech systems.
The specific data is subject to PDF, and the above content is for reference
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