Allicdata Part #: | DMPH3010LPS-13-ND |
Manufacturer Part#: |
DMPH3010LPS-13 |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 30V 60A POWERDI5060 |
More Detail: | P-Channel 30V 60A (Tc) 2.6W (Ta) Surface Mount Pow... |
DataSheet: | DMPH3010LPS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.28908 |
Vgs(th) (Max) @ Id: | 2.1V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 2.6W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6807pF @ 15V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 139nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMPH3010LPS-13 is a type of field-effect transistor (FET) specifically categorized as a single metal oxide semiconductor field effect transistor (MOSFET). It is a discrete semiconductor device commonly used in digital logic and other applications throughout a variety of industries including computers, telecommunications and automotive. The power MOSFET stands for “metal oxide semiconductor field effect transistor”. They are replacement for standard bipolar junction transistors (BJTs) and provide a higher degree of integration, longer operating life and lower power dissipation than BJTs.
The DMPH3010LPS-13 is a N-channel enhancement-mode MOSFET, with a gate-source threshold voltage of -5V. In other words, the voltage on the gate-source terminal needs to be -5V for the device to switch on. The gate threshold voltage is basically the amount of gate-source voltage required to enable the ‘ON’ state of the transistor. It is a low-cost, standard MOSFET suitable for use in automotive applications.
The operating principle of a MOSFET is based on the transistor action. It acts as an electronically controlled switch and uses the channels created by doping part of the substrate across which electrons can travel. The channel is opened and closed by applying voltage to the gate terminal. A high positive voltage on the gate terminal forms an inversion layer, this channel regions are formed in the N and P-type regions. Due to this channel, when a voltage is applied to the drain to source, current will flow and the FET acts as a closed switch. When no voltage is applied, the FET acts as an open switch and current does not flow.
The DMPH3010LPS-13 MOSFET is used primarily for automotive applications, due to its ability to handle higher current loads and its ability to provide high switching speed for digital logic control. Thanks to its robust design and excellent reliability, the device is also suitable for use in other applications including motor control, switching regulator systems, DC motor drives, and DC power inverters.
The device has applications in a variety of digital and analog circuits and is used in power electronics and power supplies, as well as many other digital logic and high-frequency applications. The main purpose of a MOSFET is to control power in the circuit. It is used in several devices such as DC to DC converters, switching regulators, digital logic control devices, and many more. The device is also used to provide control of high current loads, high voltage systems, and low-level signals, while offeringhigh power efficiency and low power dissipation.
In summary, the DMPH3010LPS-13 is a single MOSFET designed for applications in which high currents and high switching speeds are required. With its low-cost, robust design and excellent reliability, it is a popular choice for automotive and other high-frequency applications. The device operates according to the traditional transistor principle, where a voltage applied to the gate terminal opens and closes a channel across a substrate for electrons to travel. This allows it to act as an electronically controlled switch, controlling the flow of current between the drain and source.
The specific data is subject to PDF, and the above content is for reference
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