DMPH6050SK3Q-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMPH6050SK3Q-13DITR-ND |
Manufacturer Part#: |
DMPH6050SK3Q-13 |
Price: | $ 0.27 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 60V 7.2A TO252 |
More Detail: | P-Channel 60V 7.2A (Ta), 23.6A (Tc) 1.9W (Ta) Surf... |
DataSheet: | DMPH6050SK3Q-13 Datasheet/PDF |
Quantity: | 2500 |
2500 +: | $ 0.24162 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 1.9W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1377pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 50 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta), 23.6A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The DMPH6050SK3Q-13 is a single N-Channel RF MOSFET and one of the best choices available in the market for a variety of applications. This type of transistor is mainly used in high voltage, high frequency, and high current applications. It is mainly used in amplifiers, radio transmitters and receivers, and high speed switching applications. This type of application requires high power transistors that can handle up to 1000 volts and operate at frequencies up to 500 MHz.
Application Field of DMPH6050SK3Q-13
As mentioned earlier, the DMPH6050SK3Q-13 is mainly used for high voltage, high frequency, and high current applications. It is mostly used in communication systems such as radio transmitters and receivers, high speed switching applications, and amplifiers. It is also used in automotive and industrial applications that require high power transistors. Some other application fields of this N-Channel RF MOSFET are:
- High-power color video processing
- Switch-mode power supply
- Servo and motor control
- Inverter control
- Linear and switching regulators
Working Principle of DMPH6050SK3Q-13
In a MOSFET the electrical current flows through the channel between the source and the drain when the voltage is applied to the gate terminal. When the voltage applied to the gate is high, the “gate control” forces the current to flow between the source and the drain, allowing current through the MOSFET device. When the voltage applied to the gate is low, the current stops flowing as the MOSFET is effectively turned off.
The operation of the DMPH6050SK3Q-13 is similar to other MOSFETs in the market. It has an N-Channel and is the most common type of MOSFET. Its operation is similar to that of the P-Channel MOSFET, but with the difference that the current flows through the channel between the source and the drain when the voltage is applied to the gate terminal. Additionally, this is a RF MOSFET, which means that it can be used in high frequency applications. Additionally, DMPH6050SK3Q-13 is a single-cell transistors, meaning that it has one channel on its own and is used most commonly for high voltage, high frequency, and high current applications.
Advantages of DMPH6050SK3Q-13
The DMPH6050SK3Q-13 is designed to provide the highest level of performance in applications that require high voltage, high frequency, and high current. It has very low on-state resistance, which makes it suitable for high voltage applications. This means that it can handle up to 1000 volts and operate at a frequency as high as 500 MHz. Furthermore, it has a high input and output capacitance which provides better noise immunity and prevents false triggering at high frequencies. It also supports higher drain currents and higher voltages, allowing it to be used in more demanding applications.
In addition, the DMPH6050SK3Q-13 comes with a very low gate capacitance, which is beneficial in high-speed switching applications. This technology reduces the overall power dissipated by the MOSFET and helps to improve the efficiency of devices. Furthermore, this MOSFET offers excellent thermal performance and is able to dissipate more heat than other single-cell transistors.
Conclusion
The DMPH6050SK3Q-13 is a N-Channel single-cell transistor that is suitable for high voltage, high frequency, and high current applications. It is mainly used in radio transmitters and receivers, high speed switching applications, and amplifiers. This MOSFET is designed to provide high performance, with low on-state resistance, and high input and output capacitance. Additionally, it has a low gate capacitance which is beneficial for high-speed switching applications and offers excellent thermal performance.
The specific data is subject to PDF, and the above content is for reference
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