DMPH4015SK3Q-13 Allicdata Electronics
Allicdata Part #:

DMPH4015SK3Q-13DITR-ND

Manufacturer Part#:

DMPH4015SK3Q-13

Price: $ 0.35
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET PCH 40V 14A TO252
More Detail: P-Channel 40V 14A (Ta), 45A (Tc) 1.7W (Ta) Surface...
DataSheet: DMPH4015SK3Q-13 datasheetDMPH4015SK3Q-13 Datasheet/PDF
Quantity: 2500
2500 +: $ 0.31443
Stock 2500Can Ship Immediately
$ 0.35
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 1.7W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4234pF @ 20V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V
Series: Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs: 11 mOhm @ 9.8A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMPH4015SK3Q-13 is a DMOS (double-diffused MOS) transistor that is specifically designed to handle even higher power applications than many other types of MOSFETs. In fact, it has been designed to be able to handle a maximum continuous drain current of 3 amps and it can be used to a maximum drain-source voltage of 540 volts. As such, it is suitable for a wide range of applications that require high power handling and reliability.

The DMPH4015SK3Q-13 is made up of two components: a drain-gate-source substrate and a gate-drain substrate. The drain-gate-source substrate has two parts, with the gate acting as a control element and the source acting as an output. The gates are connected directly to each other, and the source is connected to the drain. The gate-drain substrate consists of three components, which are the drain, the gate, and the source. The gate is connected to the drain, and the source is connected to both the gate and the drain in a series.

The working principle of the DMPH4015SK3Q-13 is simple. When a voltage is applied to the gate, it causes the drain current to increase. This, in turn, causes the drain-source voltage to rise. The DMPH4015SK3Q-13 is then able to handle higher loads than most other types of MOSFET. By controlling the gate voltage, the user is able to control the drain current and, consequently, the drain-source voltage. As such, the DMPH4015SK3Q-13 is capable of high power handling and high efficiency. The user is also able to use temperature-sensing circuits to detect when the temperature of the transistor is getting too high and to shut it off automatically, thus maintaining the safety and reliability of the device.

The DMPH4015SK3Q-13 can be used in a wide variety of applications. It is particularly suitable for applications in the automotive industry, where it can be used in a wide range of electronic fuel injection systems and as a power transistor in high-voltage DC-DC converter systems. It is also used in motor control circuits and motor speed control applications, as well as in photovoltaic solar cells. In addition, the DMPH4015SK3Q-13 is suitable for use in audio amplifiers, particularly those that require high power handling and high efficiency.

In conclusion, the DMPH4015SK3Q-13 is a highly versatile device that is suitable for a wide range of applications. It is capable of high power handling, high efficiency, and temperature-sensing circuits that make it safe to use in a variety of applications. As such, it is an ideal device for use in the automotive industry, in motor control circuits, in photovoltaic solar cells, and in audio amplifiers. It is also a reliable device that is built to handle even higher power applications than many other types of MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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