DMPH3010LK3-13 Allicdata Electronics
Allicdata Part #:

DMPH3010LK3-13-ND

Manufacturer Part#:

DMPH3010LK3-13

Price: $ 0.28
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET P-CHANNEL 30V 50A TO252
More Detail: P-Channel 30V 50A (Tc) 3.9W (Ta) Surface Mount TO-...
DataSheet: DMPH3010LK3-13 datasheetDMPH3010LK3-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.25213
Stock 1000Can Ship Immediately
$ 0.28
Specifications
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252, (D-Pak)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.9W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6807pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMPH3010LK3-13 is a single-gate, high performance, 100V, N-Channel MOSFET transistor. It is a commonly used type of power device in a variety of electronics applications and it is also known as a metal-oxide-semiconductor FET or simply MOSFET.

The DMPH3010LK3-13’s working principle is based on the physical principle of electron tunneling. When the gate voltage is applied, it creates an electric field that easily pulls the electrons from the source to the drain through the MOS gate-oxide layer. This causes a drain-to-source current to flow across the device. By controlling the voltage applied to the gate terminal, it is possible to control the amount of current flowing from the source to the drain of the MOSFET.

This device is widely used in many electronics applications such as DC/DC converters, switching power supplies, smart switches, and motor control circuits. The major advantage of using a MOSFET device is that it has very low power or current consumption, which makes it highly efficient. Additionally, the MOSFET device can operate with very fast switching speeds, which is useful for high-speed switching and logic applications. This device is also useful in high-temperature environments and has a very low gate leakage, making it a suitable power transistor in high power or high voltage applications.

The DMPH3010LK3-13 is an example of an N-Channel MOSFET that produces high-current switching performance with a low on-resistance of 0.89 Ohms. Additionally, this device can withstand a high amount of current up to 4.6A and supplies an output voltage up to 100V. This N-Channel MOSFET is an ideal choice for applications that need fast switching and require low on-resistance with a low quiescent current.

In conclusion, the DMPH3010LK3-13 is a commonly used single-gate N-Channel MOSFET that is highly efficient and can operate at high temperatures. It works based on the principle of electron tunneling and can provide the required current flow with a very low on-resistance. The device is highly suitable for high-power or high-voltage applications and can provide reliable switching performance in demanding environments. The DMPH3010LK3-13 is a great choice for applications that require low on-resistance and fast switching speeds.

The specific data is subject to PDF, and the above content is for reference

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