DMT8012LFG-7 Allicdata Electronics
Allicdata Part #:

DMT8012LFG-7DITR-ND

Manufacturer Part#:

DMT8012LFG-7

Price: $ 0.29
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 80V 9.5A PWDI3333-8
More Detail: N-Channel 80V 9.5A (Ta), 35A (Tc) 2.2W (Ta), 30W (...
DataSheet: DMT8012LFG-7 datasheetDMT8012LFG-7 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.26747
Stock 1000Can Ship Immediately
$ 0.29
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Package / Case: 8-PowerWDFN
Supplier Device Package: PowerDI3333-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.2W (Ta), 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1949pF @ 40V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 35A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The DMT8012LFG-7 Mosfet is an advanced, enhancement-type metal-oxide semiconductor field-effect transistor (MOSFET) that is designed for automated optical inspection (AOI) applications. Typical applications of this device include communication optical transceivers, industrial cameras, and medical imaging systems.

The DMT8012LFG-7 has three main sections - gate, source and drain - and operates on the basis of the electrostatic effects of an electric field between the source and gate regions. The gate terminal controls the volume of electrons flowing into the source and out through the drain by changing the electric field between the two regions. This then allows current to flow or be blocked between the source and drain.

The device is equipped with a built-in high-voltage diode to protect the MOSFET from over-voltage. It also includes an on-chip source-drain parasitic capacitance that needs to be compensated for with proper design. The on-chip output latch feature allows the transceiver to go into standby mode, reducing power consumption.

The DMT8012LFG-7 has an extremely low RDSON (on-state resistance) of 3 ohms, which enables high-speed switching. The extremely short internal gate delay times allow for high-speed switching of up to 10 GHz at 3.3 volts. The device has a high-speed logic threshold of 2.5 volts, which is suitable for high-performance applications.

The DMT8012LFG-7 features an adjustable over-temperature register that ensures robust thermal management in applications such as cameras, transceivers, and medical imaging systems. This device also has a wide temperature range of -40 to 125 degrees Celsius, which makes it suitable for various industrial applications requiring extreme temperature control. The device has an ESD protection rating of 4KV.

In summary, the DMT8012LFG-7 is an ideal solution for AOI, optical transceivers, industrial cameras, and medical imaging applications. Its extremely low RDSON, high-speed logic threshold and wide temperature range make it suitable for these types of applications. Its on-chip output latch and over-temperature control features add extra safety and performance protection in these applications.

The specific data is subject to PDF, and the above content is for reference

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