DMT8012LSS-13

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	1.5W (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1949pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	34nC @ 10V
Series:	Automotive, AEC-Q101
Rds On (Max) @ Id, Vgs:	16.5 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	9.7A (Ta)
Drain to Source Voltage (Vdss):	80V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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The DMT8012LSS-13 is a type of Field-Effect Transistor, or FET and is a single MOSFET, or Metal Oxide Semiconductor Field-Effect Transistor. This device can be used in a variety of different applications and is designed to efficiently and effectively control the flow of large amounts of current. The main benefit of this MOSFET is that it is both highly reliable and durable, as well as cost-effective. It can be used in many applications due to its low on-resistance and high current ratings, and its minimally invasive construction. The device is also very power efficient and has a low thermal resistance. How a FET WorksA FET is basically a switch composed of a semiconductor material, either n-type or p-type, and two so-called source and drain regions. The source region is where the power source is connected and the drain is used to sink or direct the current or voltage being controlled. Inside the channel between the source and the drain is an insulating material, usually silicon dioxide. The channel is then connected to a control electrode, called the gate, by a very thin and weakly conducting semiconductor material, usually an oxide layer. When a voltage is applied to the gate, it changes the conductivity of the channeling material allowing a large current to flow through the drain, or it prevents current from flowing, thereby acting as a switch. Applications of the DMT8012LSS-13The DMT8012LSS-13 can be used in a variety of different applications due to its low on-resistance, high current ratings, and power efficiency. It can be used to switch high-voltage circuits, control the current in power supplies, and as an efficient switch in low-voltage circuits. It can also be used in motor driver circuits, as a power switch in electronic locks, and as an amplifier in radio systems. The device can also be used in automotive applications, including in electronically controlled power steering systems and in engine management systems. It is also suitable for use in aviation applications, such as in fuel injection systems and navigation systems. Conclusion The DMT8012LSS-13 is a single MOSFET device designed for a variety of applications. It is highly reliable and cost-effective, and can be used to switch high-voltage circuits, control the current in power supplies, and as an amplifier in radio systems. It is also suitable for use in automotive and aviation applications, making it a very versatile device.

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