DMT8012LPS-13 Discrete Semiconductor Products |
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Allicdata Part #: | DMT8012LPS-13DITR-ND |
Manufacturer Part#: |
DMT8012LPS-13 |
Price: | $ 0.35 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 80V 9A PWRDI5060-8 |
More Detail: | N-Channel 80V 9A (Ta), 65A (Tc) 2.1W (Ta), 113W (T... |
DataSheet: | DMT8012LPS-13 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.31240 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Package / Case: | 8-PowerTDFN |
Supplier Device Package: | PowerDI5060-8 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2.1W (Ta), 113W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1949pF @ 40V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 17 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Ta), 65A (Tc) |
Drain to Source Voltage (Vdss): | 80V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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.DMT8012LPS-13 Application Field and Working Principle
The DMT8012LPS-13 is a high-efficiency fast switching N-channel MOSFET (metal-oxide-semiconductor field-effect transistor). It has a low on-resistance of 12mΩ 1.8V and is commonly used in power switching applications. It features a low gate drive voltage, low gate capacitance, and fast rise/fall times. The MOSFET also provides a high level of durable, temperature-stable performance as well as excellent energy efficiency.
A MOSFET is a type of transistor that utilizes an electric field to control the flow of electrons in a circuit. The device works by having four terminals: the drain, source, gate and body. The source is where the electrons enter the transistor, and the drain is where they exit. The gate is electrically isolated from the rest of the transistor and controls the flow of electrons. The body, also known as the substrate, is the layer of material underneath the gate which isolates the gate from the source and drain.
The DMT8012LPS-13 is ideal for applications that require power switching such as lighting, appliances, electric motors, and power tools. It is also suitable for use in a wide range of industrial, automotive and consumer applications.
The working principle of the DMT8012LPS-13 involves a completely different physical phenomenon when compared to other types of transistors. When a voltage is applied to the gate, the electric field created near the surface of the gate affects the flow of electrons. This application of a voltage causes a shift in the Fermi levels, which allows current to flow.
The MOSFET is designed to operate at high frequencies, allowing it to switch very quickly. This enables devices used in power switching applications to work more efficiently and accurately, while limiting problems such as overloading.
The DMT8012LPS-13 also has a low gate capacitance, which reduces the amount of power the device consumes. This reduces the amount of power needed to drive the gate, resulting in a more energy-efficient product.
The DMT8012LPS-13 is a great choice for any application that requires fast switching and high levels of efficiency and performance. Its low on-resistance and low gate capacitance make it an excellent option for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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