| Allicdata Part #: | DMT8012LK3-13DITR-ND |
| Manufacturer Part#: |
DMT8012LK3-13 |
| Price: | $ 0.29 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Diodes Incorporated |
| Short Description: | MOSFET N-CH 80V 9.5A TO252 |
| More Detail: | N-Channel 80V 44A (Tc) 2.7W (Ta) Surface Mount TO-... |
| DataSheet: |  DMT8012LK3-13 Datasheet/PDF |
| Quantity: | 1000 |
| 2500 +: | $ 0.26372 |
| Vgs(th) (Max) @ Id: | 3V @ 250µA |
| Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package: | TO-252 |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 2.7W (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 1949pF @ 40V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 34nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 12A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 44A (Tc) |
| Drain to Source Voltage (Vdss): | 80V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The DMT8012LK3-13 is a logic level type P-Channel MOSFET, which has a drain-source voltage rating of about -20V and a drain current rating of up to 10A. This device is suitable for applications such as load switching in DC/DC converter/chargers and motor control, where high switching speeds, high temperatures, and reliable performance are desired.
The DMT8012LK3-13 is composed of highly advanced silicon on insulator (SOI) MOSFET technology combined with a programmable gate resistance, resulting in a device that has low static power consumption. An integrated protection feature ensures the device will automatically shut down in the event of an overcurrent or over-temperature condition, resulting in reliable performance.
The operating principle of the DMT8012LK3-13 is relatively simple. When a voltage is applied to the gate, the transfer characteristics of the device change. This change causes the drain current to either increase or decrease, depending on the applied voltage. By controlling the gate voltage, the drain current of the device can be precisely controlled.
The DMT8012LK3-13 is particularly well-suited for high-frequency switching applications, due to its high drain-to-gate capacitance and integrated protection feature. The device is also able to support multiple operating modes, such as cyclic and/or burst modes, which allows for optimal efficiency in applications where pulse width modulation (PWM) is required.
In summary, the DMT8012LK3-13 is an ideal choice for applications that require high switching speeds, high temperatures, and reliable performance. Its integrated protection feature ensures reliable operation and its high static power consumption makes it suitable for high-frequency switching applications. The device can also support multiple operating modes and its precise controllability of drain current makes it a great choice for load switching and motor control.
The specific data is subject to PDF, and the above content is for reference
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