Allicdata Part #: | EFC4626R-TROSTR-ND |
Manufacturer Part#: |
EFC4626R-TR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2N-CH 24V 5A CSP4 |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 1.4... |
DataSheet: | EFC4626R-TR Datasheet/PDF |
Quantity: | 8000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate, 2.5V Drive |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 7.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.4W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 4-XFBGA |
Supplier Device Package: | -- |
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The EFC4626R-TR is a power FET array that belongs to the family of Transistors – FETs, MOSFETs – Arrays. This high performance power MOSFET array is an enhanced high side N-channel FET array circuit consisting of two independent power transistors in one package. The transistors are a high frequency, low threshold voltage, low voltage devices that offer highspeed switching capabilities while also ensuring rugged reliability and long service life.
The EFC4626R-TR features N-channel trench technology with inherently low on-resistance. This allows the device to provide excellent RDS(ON) performance under all conditions. Additionally, the device boasts high-current carrying capability and higher P-channel voltage levels for robust operation. The device also features overcurrent protection and thermal shutdown circuitry to ensure safe and reliable operation.
The EFC4626R-TR has a variety of applications including as an interface device to replace relays and other contactors, as well as voltage and current monitoring components. Additionally, the device is well suited for DC-DC converters, motor control, power factor correction (PFC), and automotive applications such as power window motors and power antenna drives.
The working principle of the EFC4626R-TR is based on the operation of its individual transistors. These transistors operate using a bi-directional current flow, meaning that when the gate is triggered, the P-channel of one transistor and the N-channel of the other are turned off allowing a current to flow in the direction of the gate voltage. The gate current necessary to trigger the transistors is significantly lower than the rated current of the device, so that the current transistors will remain activated even under low voltage conditions. The device can be parameterized to provide a variety of switching characteristics, depending on the customer requirements.
The EFC4626R-TR is an ideal power FET array for a wide array of applications, due to its combination of high-current carrying capability, low on-resistance, and high-speed switching. The device is easy to use and the robust protection ensures reliable operation even in demanding environments. The device can be parameterized to provide a variety of switching characteristics to meet customer specific requirements.
The specific data is subject to PDF, and the above content is for reference
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