Allicdata Part #: | EFC4C002NLTDG-ND |
Manufacturer Part#: |
EFC4C002NLTDG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET 2 N-CHANNEL 8WLCSP |
More Detail: | Mosfet Array 2 N-Channel (Dual) Common Drain 2.6... |
DataSheet: | EFC4C002NLTDG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) Common Drain |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | -- |
Current - Continuous Drain (Id) @ 25°C: | -- |
Rds On (Max) @ Id, Vgs: | -- |
Vgs(th) (Max) @ Id: | 2.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds: | 6200pF @ 15V |
Power - Max: | 2.6W |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-XFBGA, WLCSP |
Supplier Device Package: | 8-WLCSP (6x2.5) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
EFC4C002NLTDG is a semiconductor device recently developed by Alliance Component, with main application field and working principle as the main focus of this article. EFC4C002NLTDG is a type of Field Effect Transistor (FET) array, which is designed for switching and amplification of signals. The device has two input ports, two output ports, and two power ports. It is made with four N-type semiconductor materials as well as a gate oxide layer.
In terms of its application field, the EFC4C002NLTDG can be used in different fields, such as digital and analog signal processing, wireless communication, and industrial control. It can also be used in various types of circuit designs, including RF circuits, CMOS logic circuits, and dynamic signal control circuits. In addition, the device can be used as a driver stage in high-speed signal processing, as well as in various circuits for high-precision signal processing.
The working principle of the EFC4C002NLTDG is based on its ability to convert the electrical signal from one form of energy to another (in this case, from electric signals to switching signal between the two output ports). The electrical signal from the input port is applied to the gate oxide layer, which, in turn, controls the flow of current through the N-type semiconductor material. This current flow can be used to control the switching of the output ports.
The EFC4C002NLTDG is an interesting device due to its efficiency and compact design. It is also an ideal choice for high-performance designs, as it has a maximum threshold voltage of 1.5 volts and can process signals up to 5MHz. The device is a great choice for complex signal processing applications, as it can provide sufficient digital signal processing performance while operating in a space-constrained environment.
In summary, the EFC4C002NLTDG is a type of Field Effect Transistor (FET) array, which is designed for the amplification and switching of signals, and it can be used for different application fields, such as digital and analog signal processing, wireless communication, and industrial control. The device has two input ports, two output ports, and two power ports, and is made with four N-type semiconductor materials as well as a gate oxide layer. Its working principle is based on the ability to convert the electrical signal from one form of energy to another and it can provide sufficient digital signal processing performance while operating in a space-constrained environment.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
EFC4621R-A-TR | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 6A EFCPMO... |
EFC4612R-W-TR | ON Semicondu... | 0.0 $ | 1000 | MOSFET N-CH 24V 6A EFCPSu... |
EFC4612R-S-TR | ON Semicondu... | -- | 1000 | MOSFET N-CH 24V 6A EFCPMO... |
EFC4615R-TR | ON Semicondu... | -- | 1000 | MOSFET N-CH 24V 6A EFCPN-... |
EFC4618R-TR | ON Semicondu... | -- | 1000 | MOSFET 2N-CH EFCP1818Mosf... |
EFC4618R-P-TR | ON Semicondu... | -- | 1000 | MOSFET 2N-CH EFCP1818Mosf... |
EFC4622R-R-W-E-TR | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
EFC4630R-TR | ON Semicondu... | 0.0 $ | 1000 | INTEGRATED CIRCUITMosfet ... |
EFC4C002NLTDG | ON Semicondu... | -- | 1000 | MOSFET 2 N-CHANNEL 8WLCSP... |
EFC4627R-TR | ON Semicondu... | 0.08 $ | 1000 | MOSFET 2N-CH 12V 6A CSP4M... |
EFC4621R-TR | ON Semicondu... | -- | 1000 | MOSFET 2N-CH EFCPMosfet A... |
EFC4627R-A-TR | ON Semicondu... | -- | 1000 | MOSFET 2N-CH 12V 6A CSP4M... |
EFC4C012NLTDG | ON Semicondu... | 0.3 $ | 1000 | NCH 30V 30A WLCSP6 DUALMo... |
EFC4612R-TR | ON Semicondu... | -- | 1000 | MOSFET N-CH 24V 6A EFCPN-... |
EFC4619R-A-TR | ON Semicondu... | 0.2 $ | 1000 | MOSFET N-CH 24V 6A EFCPMO... |
EFC4626R-TR | ON Semicondu... | -- | 8000 | MOSFET 2N-CH 24V 5A CSP4M... |
EFC4619R-TR | ON Semicondu... | -- | 5000 | MOSFET 2N-CH EFCPMosfet A... |
MOSFET 2N-CH 30V 8AMosfet Array 2 N-Chan...
MOSFET 2N-CH 40V 6A 8PWRPAKMosfet Array ...
MOSFET 2P-CH 30V 5.8A 8SOICMosfet Array ...
MOSFET 2N-CH 80V 1.1A 8SOICMosfet Array ...
MOSFET 2N-CH 56LFPAKMosfet Array
MOSFET 2N-CH 30V 8SOICMosfet Array 2 N-C...