EFC4C002NLTDG Allicdata Electronics
Allicdata Part #:

EFC4C002NLTDG-ND

Manufacturer Part#:

EFC4C002NLTDG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2 N-CHANNEL 8WLCSP
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 2.6...
DataSheet: EFC4C002NLTDG datasheetEFC4C002NLTDG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): --
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 15V
Power - Max: 2.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-XFBGA, WLCSP
Supplier Device Package: 8-WLCSP (6x2.5)
Description

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EFC4C002NLTDG is a semiconductor device recently developed by Alliance Component, with main application field and working principle as the main focus of this article. EFC4C002NLTDG is a type of Field Effect Transistor (FET) array, which is designed for switching and amplification of signals. The device has two input ports, two output ports, and two power ports. It is made with four N-type semiconductor materials as well as a gate oxide layer.

In terms of its application field, the EFC4C002NLTDG can be used in different fields, such as digital and analog signal processing, wireless communication, and industrial control. It can also be used in various types of circuit designs, including RF circuits, CMOS logic circuits, and dynamic signal control circuits. In addition, the device can be used as a driver stage in high-speed signal processing, as well as in various circuits for high-precision signal processing.

The working principle of the EFC4C002NLTDG is based on its ability to convert the electrical signal from one form of energy to another (in this case, from electric signals to switching signal between the two output ports). The electrical signal from the input port is applied to the gate oxide layer, which, in turn, controls the flow of current through the N-type semiconductor material. This current flow can be used to control the switching of the output ports.

The EFC4C002NLTDG is an interesting device due to its efficiency and compact design. It is also an ideal choice for high-performance designs, as it has a maximum threshold voltage of 1.5 volts and can process signals up to 5MHz. The device is a great choice for complex signal processing applications, as it can provide sufficient digital signal processing performance while operating in a space-constrained environment.

In summary, the EFC4C002NLTDG is a type of Field Effect Transistor (FET) array, which is designed for the amplification and switching of signals, and it can be used for different application fields, such as digital and analog signal processing, wireless communication, and industrial control. The device has two input ports, two output ports, and two power ports, and is made with four N-type semiconductor materials as well as a gate oxide layer. Its working principle is based on the ability to convert the electrical signal from one form of energy to another and it can provide sufficient digital signal processing performance while operating in a space-constrained environment.

The specific data is subject to PDF, and the above content is for reference

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