EFC4612R-S-TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The EFC4612R-S-TR is a RF transistor, and more specifically it is a high-performance N-Channel enhancement mode Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET). This device is mainly used in high-frequency radio-frequencyly-operated circuits, and is specially designed to withstand low-level voltages. The applications in which the device can be used range from high-frequency manipulation and precision control to high-power amplification. As its name implies, the EFC4612R-S-TR can be used as both an amplifier and a switch, which makes it a versatile device for many applications where solid-state switching is needed.

In terms of its working principle, the EFC4612R-S-TR operates based on the electric field between the gate and the source. This field controls the flow of electrons between the drain and the source, and by controlling this electric field, it is possible to control the amount of current that flows through the device. This control of the current allows for very precise control of the electrical circuit, making this device perfect for use in high-frequency, precision circuits.

In order to understand the specific application fields of the EFC4612R-S-TR, it is important to understand its range of power dissipation. The maximum power dissipation for this device is 60 watts, and the maximum safe operating temperature is 175°C. This limits the type of applications in which the device can be used, as it is not designed for applications that require higher temperatures or higher power. However, the device is suitable for use in a wide range of applications, including RF RF switching, RF amplifier circuits, and frequency synthesis.

As with any high-frequency transistor device, the EFC4612R-S-TR has its own range of gate capacitance and gate resistance. The gate capacitance for this device is between 0.4pF and 7pF, depending on the channel length. The gate resistance is between 120Ω and 160Ω, and the package size is 2.6mm x 2mm. This device offers excellent performance in terms of both power handling and operating temperature, making it an ideal choice for a wide range of applications.

Overall, the EFC4612R-S-TR is a versatile, high-performance transistor suitable for use both as an amplifier and a switch. It has the advantage of being able to operate at low-level voltages, and is capable of handling a range of power. Its low gate capacitance and gate resistance makes it ideal for use in high-frequency, precision circuits, and its wide range of temperature makes it suitable for use in applications that require high-power operation. The device is an excellent choice for applications that require solid-state switching and for applications that require high-frequency manipulation and precision control.

The specific data is subject to PDF, and the above content is for reference