EFC4615R-TR

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The EFC461R-TR is a high-performance single enhancement-mode N-Channel MOSFET (metal-oxide-semiconductor field-effect transistor) from Royal Device Corporation. This type of transistor is specifically designed to operate in linear mode, allowing for high current gain with low gate-source capacitance and low gate drive voltages. This makes the EFC461R-TR an ideal device for use in digital and analog circuits, as well as for applications requiring low on-resistance.

The EFC461R-TR is a four-terminal device, composed of source, drain, gate and body terminals. The source and drain terminals serve as the current carriers for the device, while the gate and body terminals provide the interface between the device and the external circuit. By applying a voltage to the gate terminal, the resistance between the drain and the source terminals can be varied.

In terms of application field, the EFC461R-TR is suitable for use in multiple applications such as DC-DC converters, automotive electronics, motor control, and consumer electronics. The device is also suitable for general-purpose power switching applications with low- voltage drive and load, as well as for high-side switching in logic-level circuits. The high gain and low on-resistance of the EFC461R-TR make it an ideal choice for applications requiring efficient power switching.

The working principle of a MOSFET, such as the EFC461R-TR, is based on the physical principles of the semiconductor materials used in its construction. In the most simple terms, a MOSFET is a three-terminal switch, which allows a gate voltage to control the current flow between the drain and the source. As the gate voltage is increased, the number of charge carriers within the channel increases, thus reducing the resistance between the drain and the source.

The design of the EFC461R-TR incorporates a number of features that make it a high-performance switch suitable for a variety of applications. The device is designed to lower gate-source capacitance, and draw low gate drive voltages, thus allowing for improved circuit efficiency. The low on-resistance of the device also makes it an ideal choice for power-switching applications where low losses are desired.

The EFC461R-TR is also suitable for use in a wide range of temperature ranges. It can operate in temperatures ranging from -55°C to +150°C, and has transient thermal performance of 175°C/watt. This further improves the usability of the device by allowing it to be used in a variety of operating conditions.

In conclusion, the EFC461R-TR is a high-performance single enhancement-mode N-Channel MOSFET, suitable for a range of applications. The device\'s low gate drive voltage, low capacitance, and low on-resistance make it an ideal choice for power switching applications. The device is also designed to operate over a wide temperature range, enhancing its usability for multiple applications.

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