EFC4612R-W-TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The EFC4612R-W-TR field-effect transistor (FET) is a single-channel device available in a TO-220 package, containing both vertical and horizontal mounting tabs. As an n-channel enhancement mode FET, it offers improved resistance and current-handling over traditional bipolars. This is because FETs feature an insulated gate with internal source and drain fields, making them ideal for use in AC/DC circuits with tight performance constraints.

How Does the EFC4612R-W-TR Work?

At its most basic level, the EFC4612R-W-TR operates by use of its gate terminal. When a positive voltage is applied to the gate terminal, the channel between source and drain will conduct current. This in turn creates a drain-source "on" state for the FET, where it will pass current when voltage is applied to either the source or drain. Meanwhile, when the voltage is removed from the gate terminal, the transistor will be in its "off" state and will no longer conduct current.

This FET is a depletion-mode device, meaning the channel between source and drain is normally "on" and conducts current. In order to turn off the channel, a negative voltage must be applied to the gate. This is an important distinction from an enhancement-mode FET, which operates in the opposite way.

Applications of the EFC4612R-W-TR

Because of its improved resistance and current-handling compared to traditional bipolars, the EFC4612R-W-TR is well-suited for AC/DC circuits with tight performance requirements. In particular, it is often used in systems such as audio amplifiers, switching power supplies, and other high-speed switching applications. It can also be used in situations where reliability and minimal power dissipation are necessary, such as in computers, communications, and automotive systems.

The EFC4612R-W-TR also works well in high-frequency, high-temperature applications due to its high breakdown voltage. This transistor is optimized for operation up to 160°C, making it suitable for environments where other standard FETs may not perform. This can be invaluable in high-speed digital design, where proper operation and reliability are essential.

Why Choose the EFC4612R-W-TR?

The EFC4612R-W-TR offers several advantages over other transistors, most notably its improved resistance and power-handling capabilities. Thanks to its optimized package design, it can also operate reliably in high-temperature environments, making it an excellent choice for applications involving power density and constant operation. The combination of high-frequency operation, improved current-handling, and high-temperature tolerance makes the EFC4612R-W-TR a great choice for many high-performance AC/DC applications.

The specific data is subject to PDF, and the above content is for reference