EFC4630R-TR Allicdata Electronics
Allicdata Part #:

EFC4630R-TR-ND

Manufacturer Part#:

EFC4630R-TR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: INTEGRATED CIRCUIT
More Detail: Mosfet Array 2 N-Channel (Dual) Common Drain 24V 6...
DataSheet: EFC4630R-TR datasheetEFC4630R-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Last Time Buy
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate, 2.5V Drive
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 45 mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 1.6W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Supplier Device Package: EFCP1313-4CC-037
Description

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EFC4630R-TR is an electronic device that belongs to the category of transistors and FETs, MOSFETs. It is an array type of device with multiple inputs and outputs. It is used in application fields which require low on-state resistances and low on-resistance variation with voltage, while also having low gate drive requirement.

The working principle of EFC4630R-TR is based on the field effect transistor (FET). FETs are three-terminal devices. The channel of a FET contains an area of negative or positive charged semiconductor material. The application of a voltage to the gate terminal determines the current flowing through the device. The input voltage applied to the gate terminal controls the conduction current between the source and the drain terminals.

EFC4630R-TR contains a p-type substrate, two n-type well regions, and two n-type tabs. The two well regions are isolated within the substrate and the two tabs are connected to the substrate. The two well regions are connected by a channel. When a positive voltage is applied to the gate terminal, the electrons form a high concentration region (channel). Consequently, the current between the source and the drain increases, resulting in a low on resistance.

The applications of EFC4630R-TR include high current switching in low power applications. It can be used to control the voltage and current flow between the source and drain terminals. It can also be used for power switching applications that require low on-state resistance and low on-resistance variation with voltage. The EFC4630R-TR can also be used for switching AC power. It is particularly suitable for inductive loads such as electric motors, where a low on-state resistance is essential to reduce power loss and heat generation.

The EFC4630R-TR can also be used in small signal switched such as transceivers. The device has a low power switching capacity, low on-state resistance, and small size, which makes it suitable for applications where low power consumption, size, and cost are critical factors.

EFC4630R-TR is a versatile device that has wide range of applications, including low power switching and signal switching. It has low on-state resistance and on-resistance variation with voltage and is a cost effective solution for applications where low power, size, and cost are important factors. It is an array type device, which makes it easier to integrate and control multiple inputs and output functions.

The specific data is subject to PDF, and the above content is for reference

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