EFC4612R-TR Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	1.3V @ 1mA
Package / Case:	4-XFBGA
Supplier Device Package:	EFCP1313-4CC-037
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1.6W (Ta)
FET Feature:	--
Vgs (Max):	±12V
Gate Charge (Qg) (Max) @ Vgs:	7nC @ 4.5V
Series:	--
Rds On (Max) @ Id, Vgs:	45 mOhm @ 3A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	--
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drain to Source Voltage (Vdss):	24V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Not For New Designs
Packaging:	Tape & Reel (TR)

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EFC4612R-TR Application Field and Working Principle

The EFC4612R-TR is an enhancement-mode field-effect transistor (FET) specially designed for fast, low-power operation in high-frequency power switches. This device is unique in that it is a low-threshold device, meaning that it can be operated using a low gate voltage, making it ideal for applications with low power supplies. Its small size, high switching speed, and low input capacitance make it suitable for a variety of applications. In this article, we will discuss the application field for EFC4612R-TR and its working principle.

Application Field

EFC4612R-TR is a versatile FET that can be used in many electronic systems. It can be used in high frequency power switches, DC-DC converters, power amplifiers, voltage regulators, and other analog and digital circuits. The device is especially well suited for high frequency applications such as radiofrequency (RF)front-end modules, Class D amplifiers, and line drivers. The low gate threshold voltage and fast switching speeds offer improved system level performance. The low input capacitance is ideal for applications that require high-voltage control of low-voltage signals. The EFC4612R-TR is also suitable for use in automotive applications, such as automotive infotainment systems. As automotive systems require increased power efficiency and performance, the EFC4612R-TR offers superior efficiency and faster response times than conventional FETs. In addition, the low gate voltage operation allows the FET to be used in systems with low power supplies.

Working Principle

The EFC4612R-TR is a depletion-mode FET that operates by creating a voltage differential between the gate and the drain. This voltage causes electrons to flow from the drain to the gate, creating an inversion layer. This layer is what allows the device to conduct current. The gate terminal is the control input and is used to modulate the transistor\'s current flow. When a positive voltage (relative to the source) is applied to the gate, it creates an electric field that drives electrons to the gate, forming an inversion layer. This inversion layer allows current to flow between the drain and the source. When the gate voltage is decreased, the electric field dissipates and the inversion layer collapses, turning off the transistor. Unlike other FETs, the EFC4612R-TR operates at a low gate voltage, which means that it can be used in systems with a low power supply. The low gate voltage also allows for faster switching speeds, making the device suitable for high-frequency applications.

Conclusion

The EFC4612R-TR is a high-performance FET that offers a unique combination of high speed, low power consumption, and low input capacitance. Its small size, fast switching speed, and low gate voltage makes it suitable for a variety of applications, particularly high-frequency switches and automotive infotainment systems. The device\'s working principle is based on creating a voltage differential between the gate and the drain, which allows current to flow when a positive voltage is applied to the gate. With its unique features, the EFC4612R-TR is an ideal choice for applications that demand high performance and low power consumption.

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