EKI04036

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The EKI04036 single metal-oxide-semiconductor field-effect transistor (MOSFET) offers an efficient and compact means of making a wide variety of switching, amplifying, and other design applications. The MOSFET is a three-terminal device that uses a gate terminal to control current flow from source to drain. It is a voltage-controlled device, meaning that the application of an input voltage can control the current flowing through the device.

The EKI04036 single MOSFET offers a large on-state current carrying capability (>10A) and an extremely low on-state resistance (< 0.07ohm). This combination makes it an ideal choice for applications requiring high-current switching such as power supplies, motor control, and DC to DC converters. With its low on-state resistance and low input capacitance, the device is well suited for high-speed switching and signal processing applications.

Applications for the EKI04036 include: motor control, DC-DC converters, power supplies, and switching applications. The device is also suitable for use in high power amplifier design. The EKI04036 provides excellent drain-source breakdown voltage with excellent switching capability and low input capacitance, making it ideal for use in high speed switching applications. The device is also suitable for use in high power amplifier design as it offers a low on-state resistance and large current carrying capability.

The working principle of the EKI04036 is based on the capacitive coupling between the gate-drain and gate-source terminals of the device. This coupling acts as an amplifier, allowing the device to control the current flow of the drain and source terminals. In the ‘on’ state the gate-drain is coupled and the gate-source is not coupled, providing a very low effective resistance between drain and source. In the ‘off’ state the gate-drain is uncoupled and the gate-source is coupled, providing a very high effective resistance between drain and source.

The EKI04036 is an enhancement type MOSFET, meaning that an increase in drain-source voltage will increase the channel conductance. This means the device can only be operated in the enhancement mode, where an increase in gate voltage increases the drain current. The device is protected against overvoltage and current excursions due to its built-in protection circuitry. This ensures that the EKI04036 is an ideal choice for a wide range of applications.

In summary, the EKI04036 single MOSFET is an efficient and versatile three-terminal device for making a wide range of applications. Its high-current carrying capability and low on-state resistance make it an ideal choice for power supplies, motor control, DC to DC converters, and signal processing applications. The device is also well suited for use in high power amplifier designs due to its low input capacitance and large current carrying capability. The working principle of the device is based on capacitive coupling between the gate-drain and gate-source terminals and the device provides excellent protection against overvoltage and current excursions. With its impressive range of features and capabilities, the EKI04036 is the perfect choice for a wide range of applications.

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