Allicdata Part #: | EKI07076-ND |
Manufacturer Part#: |
EKI07076 |
Price: | $ 0.55 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Sanken |
Short Description: | MOSFET N-CH 75V 85A TO-220 |
More Detail: | N-Channel 75V 85A (Tc) 135W (Tc) Through Hole TO-2... |
DataSheet: | EKI07076 Datasheet/PDF |
Quantity: | 1000 |
4000 +: | $ 0.49701 |
Vgs(th) (Max) @ Id: | 2.5V @ 1.5mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 135W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6340pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 91nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 6.6 mOhm @ 44A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 85A (Tc) |
Drain to Source Voltage (Vdss): | 75V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The EKI07076 is a N-channel enhancement-mode silicon field effect transistor. It has been specifically designed for off-line primary switchers.The transistor can be operated in the forward transition region, so it can reduce switching losses, which results in an increased efficiency and power savings. The EKI07076 also features low on-resistance, making it suitable for use in switching mode power supply applications. The EKI07076 has an electrical strength rating of 100A, making it highly suitable for operating in high temperature and high frequency switching applications. It is also widely used in various automotive and industrial applications, including engine control systems, motor control systems, and power converters.The working principle of the EKI07076 is fairly simple. It works by controlling the flow of current between the source and the drain, by varying the amount of charge stored in the gate. A positive gate voltage will reduce the channel resistance, allowing current to flow between source and drain. A negative gate voltage will increase the channel resistance, setting a limit on the amount of current which can flow between source and drain.The EKI07076 uses a depletion-mode Field Effect Transistor (FET). This type of FET works by varying the resistance of the semiconductor channel, when an external voltage is applied to the Gate terminal. The BJT type of transistor uses an internal depletion gate voltage to control the conduction between the source and drain terminals. The advantage of a FET is that it requires less drive current than the BJT to fully turn the device on, which allows for increased efficiency.The main feature of the EKI07076 is the low on-resistance, which allows it to handle higher current levels than other transistors. Additionally, the transistor features low gate charge and low input capacitance, making it suitable for switching applications which require very fast turn-off times.In summary, the EKI07076 is a highly efficient FET which is suitable for use in high temperature, high frequency, and high current switching applications. It is widely used in automotive and industrial applications due to its low on-resistance, low gate charge and high switching performance.
The specific data is subject to PDF, and the above content is for reference
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