EKI06075 Allicdata Electronics
Allicdata Part #:

EKI06075-ND

Manufacturer Part#:

EKI06075

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 60V 78A TO-220
More Detail: N-Channel 60V 78A (Tc) 116W (Tc) Through Hole TO-2...
DataSheet: EKI06075 datasheetEKI06075 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.34689
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 116W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3810pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 53.6nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 39A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The EKI06075 is an N-channel enhancement mode MOSFET, which is a type of transistor used for a variety of different applications. This type of device is often found in complex industrial machinery and is also a popular choice for power management applications. It has a high power efficiency and offers excellent reliability.

The key advantages of this particular type of transistor are its low on-state resistance, low Gate-source leakage current, and high breakdown voltage. Its very low gate charge means that gate controlled switching is fast and efficient. EKI06075 also has a low gate input capacitance, making it ideal for use in high frequency applications.

The EKI06075 is a complex MOSFET with multiple types of features, but at its core it is a three-terminal enhancment-mode semiconductor device consisting of a channel which behaves similar to an open switch when voltage is applied to the gate terminal. When the voltage on the gate terminal is not high enough, then the transistor will be in its \'off\' state and when the voltage exceeds a certain value then the channel allows the current to flow between the source and drain. The EKI06075 is ideal for this type of application because it has a high drain-source breakdown voltage of 250V and a max capable current of 300mA.

This particular MOSFET can be used for a wide range of applications. It is well suited for power-supply control, pulsewidth modulation and muting as well as in audio amplifiers, motor control and high-frequency switching. It is also commonly used as a switching element in a switch-mode power supply, as it can control both the output voltage and current. Additionally, it can be used for solid-state relay controlling and logic level sensing.

The EKI06075 is a robust and reliable device, making it ideal for various different types of applications. It is capable of withstanding high peak current, voltages and temperatures and has a low power dissipation. Moreover, its high reliability and low on-state resistance make it suitable for use in high-volume applications with relatively low power requirements. Additionally, its low power loss enables it to be a cost-effective device for power management applications.

Although the EKI06075 has several advantages, it does come with certain drawbacks as well. Firstly its low Gate input capacitance makes it unsuitable for applications which require a high-speed switch operation. Additionally its small size means that it cannot handle large currents, making it unsuitable for high power applications. Despite these drawbacks, the EKI06075 is still a popular choice among professionals in a wide variety of applications.

The EKI06075 is an ideal choice for a variety of power management and switching applications due to its excellent reliability, low power dissipation, low on-state resistance and high breakdown voltage. Its low gate input capacitance makes it suitable only for low frequency applications, but its wide range of features make it an ideal choice for a variety of different applications.

The specific data is subject to PDF, and the above content is for reference

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