EKI07117 Allicdata Electronics
Allicdata Part #:

EKI07117-ND

Manufacturer Part#:

EKI07117

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Sanken
Short Description: MOSFET N-CH 75V 62A TO-220
More Detail: N-Channel 75V 62A (Tc) 116W (Tc) Through Hole TO-2...
DataSheet: EKI07117 datasheetEKI07117 Datasheet/PDF
Quantity: 1000
6000 +: $ 0.34689
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 116W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4040pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 31.2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Drain to Source Voltage (Vdss): 75V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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EKI07117 is a transistor, also known as FET or field effect transistor, that utilizes the field effect to control electric current. It is a single MOSFET (metal–oxide–semiconductor field-effect transistor) and is typically used in switching applications. 

A MOSFET is composed of three terminals, the source, drain, and gate. The source and the drain are the two ends of the transistor, creating a conducting channel between them. This conductive channel is created by the movement of electrons that are drawn in by an electric field applied through the gate. The flow of electrons can be modulated by this electric field, which gives rise to the name \'field effect transistor\'.

EKI07117 is a special type of MOSFET device due to its low on resistance (Vgs = 4.5 V, Ids = 3 A) and breakdown voltage (Vds = 700 V). It also offers an improved Rdson compared to other MOSFET types, which gives excellent thermal performance. Additionally, its wide temperature operating range of -55º C to +150º C makes it suitable for a wide range of applications.

Due to its properties, EKI07117 is most suitable for power and switch-mode topology applications such as switching power supplies, dc-to-dc converters, and DC-AC inverters. It can also be used in low-end AC power switching applications. Some of the features that make this device suitable for high-power switching, include its low gate charge, low internal capacitance and excellent switching characteristics, providing high total efficiency, high slew rate, and reduced ringing properties.

EKI07117 is widely used for switching High Voltage power applications. The device\'s high maximum drain to source voltage, high current carrying capability, and low on resistance applications make it the ideal choice for use in power supply design. The device is normally operated with a single supply voltage, however, depending on the application, multiple supply voltages can be used.

EKI07117 also has other applications such as low-side switching, motor control and LED lighting. It is often used as an alternative to power MOSFETs in low-side switching applications. It can also be used in motor control applications, providing efficient and smooth control of speed and current. It also offers effective dimming control for LED lighting systems.

EKI07117 operates on the principle of a metal–oxide–semiconductor field-effect transistor. This means that a small electric field is created between the source and the drain, which allows for the flow of electrons between the two terminals. The field is created by the gate, which is modulated by the applied voltage. Therefore, the electron flow between the source and drain is established and regulated by the gate voltage. The current flow can be controlled by changing the gate voltage, which will then modify the electric field. This feature makes EKI07117 suitable for switching applications, as it can be easily switched on or off with a small gate voltage.

EKI07117 is one of the most widely used transistors in the world, due to its robust design, high performance and excellent reliability. It offers a wide range of applications, due to its low on resistance, high breakdown voltage and improved Rdson, making it ideal for high-power switching applications. Its low gate charge, low internal capacitance and excellent switching characteristics also make it an increasingly popular choice for power supply design applications.

The specific data is subject to PDF, and the above content is for reference

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