Allicdata Part #: | ES1B-E3/5ATGITR-ND |
Manufacturer Part#: |
ES1B-E3/5AT |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | ES1B-E3/5AT Datasheet/PDF |
Quantity: | 1000 |
7500 +: | $ 0.04989 |
15000 +: | $ 0.04435 |
37500 +: | $ 0.04157 |
52500 +: | $ 0.03696 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 920mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 25ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES1B |
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The ES1B-E3/5AT rectifier is a type of single diode, designed for blocking downward arcs. It is a high voltage diode, designed for use in medium power applications.
Applications
The ES1B-E3/5AT rectifier is commonly used in various applications, such as:
- Inverters
- Battery charging
- DC power supplies
- Motors circuits
- Power distribution systems
- Lighting equipment
- Industrial and consumer electronics
Working Principle
The ES1B-E3/5AT rectifier is composed of a single diode in a hermetically sealed packaging. It has a reverse blocking voltage of around 1600V, and can handle up to 50A of continuous current. The diode operates on the principle of reverse blocking: when the applied voltage is lower than its reverse blocking voltage, current can not flow through the diode. However, when the applied voltage is higher than its reverse blocking voltage, the diode will conduct current. This makes it ideal for applications such as power distribution, where it is desirable to control the flow of current.
The ES1B-E3/5AT rectifier is also designed for use in high frequency circuits, due to its low capacitance and high switching speed. It is capable of switching in excess of 10kHz, making it suitable for high power applications. Furthermore, the diode has a low forward voltage drop, which results in greater efficiency in power conversion applications.
Conclusion
The ES1B-E3/5AT rectifier is a single diode designed for use in high power applications. It has a reverse blocking voltage of 1600V and a forward voltage drop of 3.5V, making it suitable for a variety of medium power applications. The diode also features a low capacitance and high switching speed, making it ideal for use in high frequency circuits. Due to its combination of features and performance, it is an excellent choice for use in a variety of power conversion applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1B-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B R3G | Taiwan Semic... | 0.06 $ | 3600 | DIODE GEN PURP 100V 1A DO... |
ES1BLHR3G | Taiwan Semic... | 0.07 $ | 5400 | DIODE GEN PURP 100V 1A SU... |
ES1BL R3G | Taiwan Semic... | 0.07 $ | 10800 | DIODE GEN PURP 100V 1A SU... |
ES1B-LTP | Micro Commer... | -- | 5000 | DIODE GEN PURP 100V 1A DO... |
ES1B | ON Semicondu... | -- | 22500 | DIODE GEN PURP 100V 1A SM... |
ES1BE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
ES1B-E3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-13-F | Diodes Incor... | -- | 130000 | DIODE GEN PURP 100V 1A SM... |
ES1BTR | SMC Diode So... | 0.04 $ | 1000 | ULTRA FAST RECTIFIER 600V... |
ES1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1B-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BEIGE | B&B Smar... | 0.0 $ | 1000 | TB DIN END BRACKET 100PC |
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