Allicdata Part #: | ES1BLRTG-ND |
Manufacturer Part#: |
ES1BL RTG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A SUB SMA |
More Detail: | Diode Standard 100V 1A Surface Mount Sub SMA |
DataSheet: | ES1BL RTG Datasheet/PDF |
Quantity: | 1000 |
22500 +: | $ 0.04445 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1BL RTG Application Field and Working Principle
ES1BL RTG is a special type of diode-rectifier, single in its form. It is used in the applications of AC power rectification and comes in various voltage ratings that can range from 5V - 1000V and Power Ratings that can range from 200mW - 5.0 W. The majority of ES1BL RTGs are Silicon-based and aim to increase the accuracy of the AC signals without increasing the costs associated with it. Some of the most common applications of ES1BL RTG includes:
- AC-DC conversion
- Regulated DC Current Supply
- Automotive Electronic Circuits
- Power Supplies
- Low-Voltage Amplifiers
The working principle of the ES1BL RTG is quite simple. It features a diode-rectifier configuration which allows the passing of current only in a single direction. The diode-rectifier consists of two layers, the anode and cathode. The anode layer consists of a single n-type silicon junction and the cathode layer consists of a single p-type silicon junction. When an alternating current is passed through the diode-rectifier configuration of the ES1BL RTG, the anode layer will absorb the positive charges while the cathode layer will absorb the negative charges. The result is a single flowing DC current that is then passed through the load.
The ES1BL RTG is capable of operating at very high speeds and it has a very low on-state resistance. This allows it to not only provide excellent current and voltage stability but also extremely low power consumption. The ES1BL RTG also provides very high surge and pulse current capabilities, making it ideal for applications where large currents are expected.
The ES1BL RTG has a variety of features that make it an ideal choice for AC power rectification in applications such as automotive electronics, regulated DC current supplies, power supplies and low-voltage amplifiers. It is highly efficient, cost-effective and capable of operating at very high speeds, making it a popular choice for many applications. Thanks to its robust design, the ES1BL RTG is also capable of withstanding large transient currents and can be used in many different challenging environments.
Overall, the ES1BL RTG is an ideal choice for AC power rectification in various applications and its use continues to increase as its cost and reliability become more attractive. It is capable of operating at very high speeds, offers exceptionally low on-state resistance and provides robustness and stability in current and voltage output. ES1BL RTG is an excellent and cost-effective choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
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ES1BLHR3G | Taiwan Semic... | 0.07 $ | 5400 | DIODE GEN PURP 100V 1A SU... |
ES1BL R3G | Taiwan Semic... | 0.07 $ | 10800 | DIODE GEN PURP 100V 1A SU... |
ES1B-LTP | Micro Commer... | -- | 5000 | DIODE GEN PURP 100V 1A DO... |
ES1B | ON Semicondu... | -- | 22500 | DIODE GEN PURP 100V 1A SM... |
ES1BE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
ES1B-E3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-13-F | Diodes Incor... | -- | 130000 | DIODE GEN PURP 100V 1A SM... |
ES1BTR | SMC Diode So... | 0.04 $ | 1000 | ULTRA FAST RECTIFIER 600V... |
ES1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1B-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BEIGE | B&B Smar... | 0.0 $ | 1000 | TB DIN END BRACKET 100PC |
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