ES1BL RQG Allicdata Electronics
Allicdata Part #:

ES1BLRQG-ND

Manufacturer Part#:

ES1BL RQG

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A SUB SMA
More Detail: Diode Standard 100V 1A Surface Mount Sub SMA
DataSheet: ES1BL RQG datasheetES1BL RQG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.04520
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

ES1BL RQG is a type of single diode rectifier. It has rectifier function and it is widely used in various industrial applications. This rectifier is manufactured to be highly reliable and operate with low thermal impedance. It also provides high efficiency, low noise and low power consumption, making it an ideal choice for various situations where rectification is needed.

Application Field and Working Principle

ES1BL RQG has a variety of applications in various industries, ranging from medical, military, information and communications technology, construction, transportation and automobile engineering. It is also used in applications such as power failure protection, power transformer rectification, battery charging and solar cell installation.

The principle behind the ES1BL RQG is based on the basic physical differences between PN junctions in a diode structure. A PN junction is formed from the combination of an n-type semiconductor material, and a p-type semiconductor material. When a PN junction is forward biased, that is, when the anode of a diode is connected to the positive e close to 0V, electrons from the n-type material move to the p-type material and holes move in the opposite direction. This causes electrons to move forward and out through the anode, and thus produce a voltage across the diode. When the same PN junction is reverse biased, that is, when the anode is connected to the negative end, electrons are blocked from the n-type material and a very small but opposite current is created due to a small electron current in the opposite direction. This effectively blocks the current from flowing through the diode, so it acts as an open switch.

The ES1BL RQG uses both of these characteristics to work as a bridge rectifier. The PN junctions of the RQG are connected in series and connected in a bridge configuration. This means that when the positive end of the RQG is connected to a DC power source and the negative end is connected to the load,the current can only flow through the circuit in one direction. By using this configuration, it is possible to get rectification without the need for a transformer.

The ES1BL RQG also utilizes efficient switching techniques to reduce power consumption and improve performance. These techniques, such as zero current switching, reduce the losses associated with turning the diodes off and on by reducing the voltage and current levels associated with switching. This results in significant power savings when the system is powered up.

Overall, the ES1BL RQG is a highly reliable and efficient rectifier which is well-suited for a wide range of applications. By understanding its operating principle, it is easy to see why it is such an effective choice for various applications requiring rectification.

The specific data is subject to PDF, and the above content is for reference

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