ES1BLHRQG Allicdata Electronics
Allicdata Part #:

ES1BLHRQG-ND

Manufacturer Part#:

ES1BLHRQG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A SUB SMA
More Detail: Diode Standard 100V 1A Surface Mount Sub SMA
DataSheet: ES1BLHRQG datasheetES1BLHRQG Datasheet/PDF
Quantity: 1000
20000 +: $ 0.04809
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Introduction to ES1BLHRQG Diodes - Rectifiers - Single

ES1BLHRQG diode-rectifier is a silicon planar diffused power diode designed for use in general-purpose rectification applications. With their fast recovery time and low forward voltage, they are well suited for use in power supply and bridge rectifier applications. This type of diodes can be used in AC/DC converters, battery-chargers and DC/DC converters.

Overview of the ES1BLHRQG

The ES1BLHRQG diode-rectifier is a single-phase, general-purpose rectifier of the highest quality. The diode-rectifier has a reverse blocking voltage, V RRM , of 1000 volts and a forward voltage of 1.2V @ 4 A. Its high surge current capability, fast recovery time and low leakage current make it ideal for use in bridge rectifier and power supply designs. The device is also mechanically robust, with its anode and cathode terminals compatible with a wide array of wire sizes and types. In addition, the ES1BLHRQG is RoHS compliant and conforms to UL, CSA and TUV safety standards.

Application Field for the ES1BLHRQG

The main application field for the ES1BLHRQG is bridge rectifier designs. This is due to its high surge current capability, low reverse volt drop and fast recovery time, all of which make it ideal for use in such applications. In addition, the ES1BLHRQG is also well-suited for use in AC/DC converters, battery-chargers and DC/DC converters. With its mechanical robustness and wide variety of anode and cathode terminal options, this device is also an excellent choice for use in harsh environmental conditions, such as automotive or off-shore electronics.

Working Principle Behind the ES1BLHRQG

The working principle behind the ES1BLHRQG is based on the semiconductor effect of a silicon PN junction diode. This type of diode is essentially two pieces of Silicon that have been doped with opposite polarity elements. When a forward bias voltage is applied to the junction between the pieces of Silicon, a low resistance path is formed, allowing a current to flow through the diode. For the ES1BLHRQG, a forward voltage V f of 1.2 V must be applied in order for a current to be allowed to flow through the diode. The reversal of the applied bias voltage results in the diode blocking current flow, thus acting as a rectifier. When a reverse bias is applied, the electrons and holes are pushed away from the junction. This results in an increase in resistance of the junction and a drop in voltage across the PN junction known as the reverse voltage drop, V R . The magnitude of V R increases with increasing reverse bias, thus limiting the amount of current able to flow through the device. For the ES1BLHRQG, the reverse voltage V R of 1000 volts helps to protect the device from voltage transients and other overvoltage events. The diode’s reverse recovery time is also very fast (5 nanoseconds) and its leakage current is very low. All of these features make the ES1BLHRQG well suited for bridge rectifier circuit designs.

Conclusion

The ES1BLHRQG diode-rectifier is a single-phase, general-purpose rectifier. It is designed for use in bridge rectifier designs and other power applications, due to its high surge current capability, low reverse voltage drop and fast recovery time. The device is also RoHS compliant and has an anode and cathode terminal compatible with a wide variety of wire sizes and types. This makes it ideal for use in harsh environmental conditions. The diode-rectifier’s working principle is based on the semiconductor effect of a PN junction diode, with a forward voltage V f of 1.2 volts and a reverse voltage V R of 1000 volts. All of these features make the ES1BLHRQG an excellent choice for use in bridge rectifier circuit designs and other power applications.

The specific data is subject to PDF, and the above content is for reference

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