Allicdata Part #: | ES1BLHRQG-ND |
Manufacturer Part#: |
ES1BLHRQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A SUB SMA |
More Detail: | Diode Standard 100V 1A Surface Mount Sub SMA |
DataSheet: | ES1BLHRQG Datasheet/PDF |
Quantity: | 1000 |
20000 +: | $ 0.04809 |
Specifications
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction to ES1BLHRQG Diodes - Rectifiers - Single
ES1BLHRQG diode-rectifier is a silicon planar diffused power diode designed for use in general-purpose rectification applications. With their fast recovery time and low forward voltage, they are well suited for use in power supply and bridge rectifier applications. This type of diodes can be used in AC/DC converters, battery-chargers and DC/DC converters.Overview of the ES1BLHRQG
The ES1BLHRQG diode-rectifier is a single-phase, general-purpose rectifier of the highest quality. The diode-rectifier has a reverse blocking voltage, V RRM , of 1000 volts and a forward voltage of 1.2V @ 4 A. Its high surge current capability, fast recovery time and low leakage current make it ideal for use in bridge rectifier and power supply designs. The device is also mechanically robust, with its anode and cathode terminals compatible with a wide array of wire sizes and types. In addition, the ES1BLHRQG is RoHS compliant and conforms to UL, CSA and TUV safety standards.Application Field for the ES1BLHRQG
The main application field for the ES1BLHRQG is bridge rectifier designs. This is due to its high surge current capability, low reverse volt drop and fast recovery time, all of which make it ideal for use in such applications. In addition, the ES1BLHRQG is also well-suited for use in AC/DC converters, battery-chargers and DC/DC converters. With its mechanical robustness and wide variety of anode and cathode terminal options, this device is also an excellent choice for use in harsh environmental conditions, such as automotive or off-shore electronics.Working Principle Behind the ES1BLHRQG
The working principle behind the ES1BLHRQG is based on the semiconductor effect of a silicon PN junction diode. This type of diode is essentially two pieces of Silicon that have been doped with opposite polarity elements. When a forward bias voltage is applied to the junction between the pieces of Silicon, a low resistance path is formed, allowing a current to flow through the diode. For the ES1BLHRQG, a forward voltage V f of 1.2 V must be applied in order for a current to be allowed to flow through the diode. The reversal of the applied bias voltage results in the diode blocking current flow, thus acting as a rectifier. When a reverse bias is applied, the electrons and holes are pushed away from the junction. This results in an increase in resistance of the junction and a drop in voltage across the PN junction known as the reverse voltage drop, V R . The magnitude of V R increases with increasing reverse bias, thus limiting the amount of current able to flow through the device. For the ES1BLHRQG, the reverse voltage V R of 1000 volts helps to protect the device from voltage transients and other overvoltage events. The diode’s reverse recovery time is also very fast (5 nanoseconds) and its leakage current is very low. All of these features make the ES1BLHRQG well suited for bridge rectifier circuit designs.Conclusion
The ES1BLHRQG diode-rectifier is a single-phase, general-purpose rectifier. It is designed for use in bridge rectifier designs and other power applications, due to its high surge current capability, low reverse voltage drop and fast recovery time. The device is also RoHS compliant and has an anode and cathode terminal compatible with a wide variety of wire sizes and types. This makes it ideal for use in harsh environmental conditions. The diode-rectifier’s working principle is based on the semiconductor effect of a PN junction diode, with a forward voltage V f of 1.2 volts and a reverse voltage V R of 1000 volts. All of these features make the ES1BLHRQG an excellent choice for use in bridge rectifier circuit designs and other power applications.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "ES1B" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1B-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B R3G | Taiwan Semic... | 0.06 $ | 3600 | DIODE GEN PURP 100V 1A DO... |
ES1BLHR3G | Taiwan Semic... | 0.07 $ | 5400 | DIODE GEN PURP 100V 1A SU... |
ES1BL R3G | Taiwan Semic... | 0.07 $ | 10800 | DIODE GEN PURP 100V 1A SU... |
ES1B-LTP | Micro Commer... | -- | 5000 | DIODE GEN PURP 100V 1A DO... |
ES1B | ON Semicondu... | -- | 22500 | DIODE GEN PURP 100V 1A SM... |
ES1BE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
ES1B-E3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-13-F | Diodes Incor... | -- | 130000 | DIODE GEN PURP 100V 1A SM... |
ES1BTR | SMC Diode So... | 0.04 $ | 1000 | ULTRA FAST RECTIFIER 600V... |
ES1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1B-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BEIGE | B&B Smar... | 0.0 $ | 1000 | TB DIN END BRACKET 100PC |
Latest Products
IDW30E65D1
Diodes - General Purpose, Power, Switchi...
PMEG4005AEA/M5X
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
RGP10J-057M3/54
DIODE GEN PURPOSE DO-204ALDiode
1N4004-N-2-2-BP
DIODE GEN PURP 400V 1A DO41Diode Standar...
CPD76X-1N5817-CT
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
JANTXV1N6662US
DIODE GEN PURP 400V 500MA D5ADiode Stand...