ES1BE-TP Discrete Semiconductor Products |
|
Allicdata Part #: | ES1BE-TPMSTR-ND |
Manufacturer Part#: |
ES1BE-TP |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | DIODE GEN PURP 100V 1A DO214AC |
More Detail: | Diode Standard 100V 1A Surface Mount DO-214AC |
DataSheet: | ES1BE-TP Datasheet/PDF |
Quantity: | 6000 |
6000 +: | $ 0.04763 |
12000 +: | $ 0.04234 |
30000 +: | $ 0.03969 |
60000 +: | $ 0.03528 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 975mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 50ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 45pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC |
Operating Temperature - Junction: | -50°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ES1BE-TP diodes are a type of single rectifier, commonly found in a wide range of applications. They are used in virtually all AC/DC power supplies, adapters, chargers, and appliances. Their reliability, high robustness, and good performance in terms of forward voltage drop (VF), reverse leakage current (IR), reduced junction temperature (Tj), and high surge capability make them a popular choice for power supply designs.
ES1BE-TP diodes belong to a class of single-phase silicon rectifiers, also known as quick recovery diodes, which are widely used in most of today\'s AC/DC, or DC/DC, power supplies. The diode is a semiconductor device commonly used in various electrical applications to rectify electric current. It consists of an anode and a cathode, separated by a semiconductor material, which can be either P-type or N-type. P-type is more commonly used, since it has a lower forward-voltage drop and a softer reverse recovery time.
When AC voltage is applied to the anode and cathode of the diode, it creates a rectifying effect, allowing the diode to pass current in only one direction. For ES1BE-TP diodes, this action usually results in an output voltage that is lower than the input voltage, with a forward voltage drop of up to 1.1V. The reverse current is only a small fraction of the forward current, but still it must be kept low to prevent damage to the diode and the circuit.
The reverse recovery time of this diode is typically very short (around 100ns). With a long reverse recovery time, a large amount of current remains in the diode after it detaches from the circuit, causing the device to heat up and potentially fail. The high-speed reverse recovery for ES1BE-TP diodes, on the other hand, helps to minimize the heat generated, thus increasing the lifetime and reducing the chances of failure.
The N-type ES1BE-TP diodes also feature high power handling capability, which is another major benefit of these devices. The rectifier can handle up to 25A of current and 500V of peak reverse voltage. It is suitable for high reliability and high-power AC/DC or DC/DC converters and switching power supplies.
Another great advantage of ES1BE-TP diodes is that they can operate up to temperatures as high as 175°C, avoiding thermal stress and possible failures. The junction temperature of the diode usually remains at a safe level of life even when subjected to severe loads.
In conclusion, ES1BE-TP diodes are reliable, robust single-phase silicon rectifiers, designed to meet the stringent requirements of AC/DC, DC/DC and PWM (pulse width modulation) switching power supply designs. Their high power handling capability and operating temperature range make them ideal for applications that require reliable performance in high temperature and power situations. Thanks to their low forward voltage drop, reduced reverse leakage current, and short reverse recovery times, they provide an efficient, reliable and cost-effective solution for power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1B-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B R3G | Taiwan Semic... | 0.06 $ | 3600 | DIODE GEN PURP 100V 1A DO... |
ES1BLHR3G | Taiwan Semic... | 0.07 $ | 5400 | DIODE GEN PURP 100V 1A SU... |
ES1BL R3G | Taiwan Semic... | 0.07 $ | 10800 | DIODE GEN PURP 100V 1A SU... |
ES1B-LTP | Micro Commer... | -- | 5000 | DIODE GEN PURP 100V 1A DO... |
ES1B | ON Semicondu... | -- | 22500 | DIODE GEN PURP 100V 1A SM... |
ES1BE-TP | Micro Commer... | 0.06 $ | 6000 | DIODE GEN PURP 100V 1A DO... |
ES1B-E3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-13-F | Diodes Incor... | -- | 130000 | DIODE GEN PURP 100V 1A SM... |
ES1BTR | SMC Diode So... | 0.04 $ | 1000 | ULTRA FAST RECTIFIER 600V... |
ES1B M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL MTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1B-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1B-M3/61T | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/H | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BHE3_A/I | Vishay Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
ES1BEIGE | B&B Smar... | 0.0 $ | 1000 | TB DIN END BRACKET 100PC |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...