ES1BL MTG Allicdata Electronics
Allicdata Part #:

ES1BLMTG-ND

Manufacturer Part#:

ES1BL MTG

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 100V 1A SUB SMA
More Detail: Diode Standard 100V 1A Surface Mount Sub SMA
DataSheet: ES1BL MTG datasheetES1BL MTG Datasheet/PDF
Quantity: 1000
15000 +: $ 0.04445
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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ES1BL MTG Application Field and Working Principle

MTG, an acronym for Metal-oxide-semiconductor field effect transistor (MOSFET), is a type of transistor used in modern integrated circuit technology. MOSFETs are widely used as switching devices in electronic designs, and the ES1BL MTG is the latest addition to the family of MTG transistors. It is classified as a Diodes-Rectifiers-Single type of device.

One of the advantages of the ES1BL MTG is its higher power efficiency compared to other MOSFETs. This means that it can handle larger loads as well as greater current and voltage levels. In addition, the ES1BL MTG also offers improved on-resistance (RDS(on)) and low gate charge (Qg) levels compared to other MOSFETs. These features are particularly valuable in high power applications such as power converters and power switching circuits.

The ES1BL MTG has a wide range of application fields, including but not limited to, DC/DC converters, motor and load controllers, HVAC systems, automotive and industrial applications, and lighting systems. In all these applications, the device is used as a switching element and is connected to other components such as inductors and capacitors in order to control the power flow in the circuit.

The working principle of the ES1BL MTG is similar to that of other MOSFETs, however, the gate design of ES1BL MTG is better optimized for high current and voltage applications. When a gate voltage is applied to the MTG, electrons are injected from the gate electrodes into the channel region resulting in an increase in the electron concentration in the channel. The higher the electron concentration in the channel, the higher will be the electric current flowing through the device, thus enabling high voltage and current switching. The ON or OFF state of the device is controlled by the amount of the gate voltage applied to the device.

In addition to the increased power efficiency, the ES1BL MTG also offers other notable features like fast switching times and high dv/dt and di/dt tolerance. These features make it an ideal choice for a wide range of applications. Moreover, the ES1BL MTG is also capable of handling both AC and DC loads and is able to operate over a wide temperature range, making it a versatile electronic device for a wide range of applications.

The ES1BL MTG is an advanced device and it offers a high level of performance and reliability. This device is also relatively inexpensive, making it an attractive choice for a wide range of applications. In conclusion, the ES1BL MTG is a powerful, efficient, and reliable device that can be used in a wide range of industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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