Allicdata Part #: | ES1BLMTG-ND |
Manufacturer Part#: |
ES1BL MTG |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 1A SUB SMA |
More Detail: | Diode Standard 100V 1A Surface Mount Sub SMA |
DataSheet: | ES1BL MTG Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04445 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 100V |
Capacitance @ Vr, F: | 10pF @ 1V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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ES1BL MTG Application Field and Working Principle
MTG, an acronym for Metal-oxide-semiconductor field effect transistor (MOSFET), is a type of transistor used in modern integrated circuit technology. MOSFETs are widely used as switching devices in electronic designs, and the ES1BL MTG is the latest addition to the family of MTG transistors. It is classified as a Diodes-Rectifiers-Single type of device.
One of the advantages of the ES1BL MTG is its higher power efficiency compared to other MOSFETs. This means that it can handle larger loads as well as greater current and voltage levels. In addition, the ES1BL MTG also offers improved on-resistance (RDS(on)) and low gate charge (Qg) levels compared to other MOSFETs. These features are particularly valuable in high power applications such as power converters and power switching circuits.
The ES1BL MTG has a wide range of application fields, including but not limited to, DC/DC converters, motor and load controllers, HVAC systems, automotive and industrial applications, and lighting systems. In all these applications, the device is used as a switching element and is connected to other components such as inductors and capacitors in order to control the power flow in the circuit.
The working principle of the ES1BL MTG is similar to that of other MOSFETs, however, the gate design of ES1BL MTG is better optimized for high current and voltage applications. When a gate voltage is applied to the MTG, electrons are injected from the gate electrodes into the channel region resulting in an increase in the electron concentration in the channel. The higher the electron concentration in the channel, the higher will be the electric current flowing through the device, thus enabling high voltage and current switching. The ON or OFF state of the device is controlled by the amount of the gate voltage applied to the device.
In addition to the increased power efficiency, the ES1BL MTG also offers other notable features like fast switching times and high dv/dt and di/dt tolerance. These features make it an ideal choice for a wide range of applications. Moreover, the ES1BL MTG is also capable of handling both AC and DC loads and is able to operate over a wide temperature range, making it a versatile electronic device for a wide range of applications.
The ES1BL MTG is an advanced device and it offers a high level of performance and reliability. This device is also relatively inexpensive, making it an attractive choice for a wide range of applications. In conclusion, the ES1BL MTG is a powerful, efficient, and reliable device that can be used in a wide range of industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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ES1BLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
ES1BHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 1A DO... |
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ES1BLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 1A SU... |
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