ES1B-M3/61T Allicdata Electronics
Allicdata Part #:

ES1B-M3/61T-ND

Manufacturer Part#:

ES1B-M3/61T

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE GEN PURP 100V 1A DO214AC
More Detail: Diode Standard 100V 1A Surface Mount DO-214AC (SMA...
DataSheet: ES1B-M3/61T datasheetES1B-M3/61T Datasheet/PDF
Quantity: 1000
16200 +: $ 0.05851
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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The ES1B-M3/61T rectifier is a single, ultra-fast complementary rectifier that is commonly employed in high-frequency switching operations. It is known for its low reverse recovery time, making it an ideal choice for applications such as brushless motor drives, switching power supplies, and voltage-controlled oscillating circuits. This device possesses an unmatched combination of low reverse voltage drop and leakage current, allowing it to perform reliably at high switching speeds or under heavy electrical load.

The ES1B-M3/61T consists of two diodes connected in anti-parallel in the same package, making it a fast- and low-voltage drop rectifier. Its package form, SIP (Single-In-Line Package), is the industry standard for diode rectifiers, as it allows for easy and cost-efficient design. The ES1B-M3/61T is a 600V 350mAx device, and it has a typical reverse voltage drop of 1V, with a maximum leakage current of 25µA at 25°C.

In normal operation, the rectified current flow passes through the anode of the first diode, which has a higher forward voltage than the second diode. This ensures the second diode is reverse-biased, and therefore the rectified current passes by, rather than through, it. When the anode voltage of the first diode drops below the forward voltage threshold of the second diode, the second diode is triggered and the rectified current flow switches through it. The device is designed to switch with extremely low losses and in a very short period of time (typically 15ns), with a minimum switching voltage of 0.4V.

Additionally, the ES1B-M3/61T is designed for robustness and reliability in harsh environments. It is rated for temperatures from -55°C to 125°C and it has a maximum surge voltage of 2.2kV. It also features a total capacitance of 7pF, making it well-suited for high-frequency applications, as well as a maximum dielectric strength of 1500V.

In summary, the ES1B-M3/61T is a single, ultra-fast complementary rectifier that offers to designers a host of advanced features such as low reverse voltage drop, ultra-low switching voltage, low total capacitance, and a wide operational temperature range. Its provides a reliable and efficient solution for high-frequency switching operations, such as brushless motor drives, switching power supplies, and voltage-controlled oscillating circuits.

The specific data is subject to PDF, and the above content is for reference

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