Allicdata Part #: | ES1FTR-ND |
Manufacturer Part#: |
ES1F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 300V 1A SMA |
More Detail: | Diode Standard 300V 1A Surface Mount SMA (DO-214AC... |
DataSheet: | ES1F Datasheet/PDF |
Quantity: | 82500 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA (DO-214AC) |
Operating Temperature - Junction: | 150°C (Max) |
Base Part Number: | ES1F |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
ES1F application field and working principle
ES1F is a Diode-Rectifier, which is the most common type of rectifier used in low power applications. It is a two-terminal device with two P-N junctions, each of which conducts current in one direction only. The diode rectifiers are used for converting AC supply to DC as well as for current clipping. The concept of a voltage source, resistor, and diode can be used to create a half wave rectifier.
ES1F devices are widely used in automotive, communication and industrial applications. In general, you can find ES1F rectifiers in situations where current needs to be limited, such as when a load is connected to a supply with high current. It is also used for voltage regulation and overvoltage protection.
In terms of power conversion, a typical ES1F diode rectifier can handle voltage up to 500 volts, current up to 5 amperes, and temperatures up to 155 °C (311 °F). The reverse leakage current can be as low as 0.1 µA.
The working principle of an ES1F diode is based on the PN junction diode characteristic. The PN junction is formed by a thin layer of N-type semiconductor material encapsulated between two layers of P-type semiconductor material. When a voltage is applied across the PN junction, the negatively charged electrons move from the N-type material toward the P-type material, creating a potential difference between the two sides. This potential difference causes current to flow from the P-type material through the N-type semiconductor material, thus creating an electric power flow.
In terms of applications, these devices are commonly used for power rectification and isolation in a variety of devices such as voltage regulators, voltage multipliers, and for various electrical isolations applications. Also, they are used in the conversion of AC power to DC power, one of the most ubiquitous applications of ES1F devices.
ES1F diodes are also used in a wide range of motor control circuits, such as motor starters and other protection circuits. Furthermore, they can be used as current detectors, or even as temperature or pressure sensors. For example, they are used in optical detectors to detect infrared radiation, such as in infrared transmitter/ receivers.
In conclusion, ES1F diodes are the most commonly used type of rectifier, used for low-power applications primarily conversion of AC power to DC power, as well as for current clipping, and other isolation applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1FL R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 300V 1A SU... |
ES1F R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 300V 1A DO... |
ES1FL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F | ON Semicondu... | -- | 82500 | DIODE GEN PURP 300V 1A SM... |
ES1F M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...