ES1FHM2G Allicdata Electronics
Allicdata Part #:

ES1FHM2G-ND

Manufacturer Part#:

ES1FHM2G

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 300V 1A DO214AC
More Detail: Diode Standard 300V 1A Surface Mount DO-214AC (SMA...
DataSheet: ES1FHM2G datasheetES1FHM2G Datasheet/PDF
Quantity: 1000
15000 +: $ 0.04435
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Description

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ES1FHM2G is a single rectifier diode with a fast reverse recovery time of 175 ns maximum. This diode is popularly used in applications which involve less power consumption and which require high frequency switching, such as in switching power supplies, battery chargers, DC-DC converters, rectifiers, etc. It is also used as protection against over-voltage and current surges in automotive and other low-power circuits.

This diode has a maximum forward voltage drop of 1V at 1A. Its maximum peak repetitive reverse voltage is 200V, and its maximum average rectified output current is 10A. The ES1FHM2G also has excellent thermal stability, boasting a thermal resistance of 40°C/W in a TO-220 package. This makes it suitable for applications that require high-temperature operation.

The working principle of the ES1FHM2G diode is based on the P-N junction in a diode. When a P-N junction diode is forward biased, it allows current to pass through it in only one direction—from the P-type to the N-type side. This forward current flow is restricted and controlled by the very narrow depletion region present at the P-N junction. When the diode is reverse biased, no current flows through it. Reverse bias is applied when the voltage applied to the diode is of a negative polarity relative to the cathode.

When the voltages applied to both ends of the diode are equal and in the same polarity, no current passes through the diode, and the diode is said to be in the ‘‘off’’ state. When the voltage of one end of the diode is more positive than the other neighbor’s, this diode will move to the ‘‘on’’ state, which allows current to flow through it. In this state, the diode is forward biased, and a current will begin to pass through the junction.

The ES1FHM2G is ideal for high-frequency switching applications due to its low forward voltage drop and excellent reverse recovery characteristics. Its fast recovery time allows it to quickly switch off when exposed to a reverse voltage. This diode is also very thermally stable, making it suitable for applications that require high-temperature operation.

In summary, the ES1FHM2G is a single rectifier diode with a fast reverse recovery time. It is used in applications which require low power consumption and high-frequency switching, such as in selective protection circuits, DC-DC converters, and automotive circuits. It also has excellent thermal stability, making it suitable for high-temperature operation.

The specific data is subject to PDF, and the above content is for reference

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