
Allicdata Part #: | ES1FLHMQG-ND |
Manufacturer Part#: |
ES1FLHMQG |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 1A SUB SMA |
More Detail: | Diode Standard 300V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
20000 +: | $ 0.04799 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single - ES1FLHMQG Application Field and Working Principle
ES1FLHMQG rectifiers are Silicon Rectangular Schottky Barrier Diodes. They are frequently used in automotive, consumer, and industrial applications. Their wide range of features, such as their availability in a variety of package sizes and their superior thermal properties, make this device a popular choice for many applications.
A single ES1FLHMQG rectifier consists of a silicon die connected to a Schottky diode. This Schottky diode is connected to an anode to enable current to flow in the forward direction. It also contains a P-type region that is connected to a cathode to enable current to flow in the rearward direction. The P-type region is used to reduce the on-state voltage of the device. This device is optimized to provide low forward voltage drop, fast switching speed and low dynamic impedance.
ES1FLHMQG diodes are either unidirectional or bidirectional and are used in a variety of applications such as battery chargers, AC/DC rectifiers and converters, solar cell protection, switching power supplies and signal processing circuits. They are also used in power management systems and signal switching systems. This wide range of application fields makes this device a great asset to have.
The working principle of ES1FLHMQG Rectifier is relatively simple. Firstly, when the voltage is applied to the cathode, a reverse biased current flows from the anode to the cathode. This makes the dection-emission effect take place, whereby electrons are collected at the anode and travel to the cathode. Thereafter, the conduction-emission effect occurs, whereby electrons are collected at the cathode and travel to the anode. This is the basic principle of operation for this particular type of diode.
The unique feature of ES1FLHMQG diodes is that they can be configured to be either unidirectional or bidirectional. The bidirectional configuration allows current to flow in both the forward and reverse directions, while the unidirectional configuration only allows current to flow in the forward direction. The unidirectional configuration is ideal for rectifier or converter applications, whereas the bidirectional configuration is perfect for applications, such as battery chargers or signal processing circuits, that require both the forward and reverse currents to be controlled.
In conclusion, ES1FLHMQG rectifiers offer many advantages for automotive, consumer, and industrial applications. Their wide range of features, including their low forward voltage drop and fast switching speed, makes them a popular choice for many applications. Additionally, their ability to be configured as either unidirectional or bidirectional makes them an even more attractive option for many applications.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1FL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 300V 1A DO... |
ES1FL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1F | ON Semicondu... | -- | 82500 | DIODE GEN PURP 300V 1A SM... |
ES1FLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
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