
Allicdata Part #: | ES1FLHM2G-ND |
Manufacturer Part#: |
ES1FLHM2G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 300V 1A SUB SMA |
More Detail: | Diode Standard 300V 1A Surface Mount Sub SMA |
DataSheet: | ![]() |
Quantity: | 1000 |
7500 +: | $ 0.05263 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 300V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.3V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 5µA @ 300V |
Capacitance @ Vr, F: | 8pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-219AB |
Supplier Device Package: | Sub SMA |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes - Rectifiers - Single
Introduction of ES1FLHM2G
ES1FLHM2G is a rectifier diode with a built-in resistive element (<200 ohms at IF=2A) is a super low voltage, low current type of varistor diode. The current rating and the pre-breakdown voltage are both super low, so it is most suitable for the peak clamping of small low voltage and low current partial circuits.
Application fields of ES1FLHM2G
The application fields for ES1FLHM2G are relatively wide. Its peak clamping function deals with temporary overloads caused by various reasons such as an instantaneous current, voltage fluctuation terms and static electricity. For example, it is used in communication equipment and home appliance, or in the surge protection circuit in AC adapter, outlet and data line.
Working Principle of ES1FLHM2G
The ES1FLHM2G working principle is similar to other varistors. Its main component is a sintered semiconductor. Its breakdown voltage is determined by the diameter of ITO (Indium tin oxide) particles. The thinner the particle, the lower the breakdown voltage.
When the voltage is below the breakdown voltage UG, the ES1FLHM2G is off and behaves like an open circuit. When the voltage exceeds UG, the varistor becomes conductive and acts like a low resistance instead of an open circuit. As voltage increases, current rises exponentially and reaches its maximum rated current.
The varistor shape of the ES1FLHM2G diode fundamentally changes the characteristics of the diode. It allows the diode to dissipate power effectively, preventing the diode from being damaged due to overheating. The built-in resistive element also helps reduce the current flow to a safe and acceptable level, protecting the varistor from more severe overloads.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES1FL RTG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHMQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1FLHR3G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F R3G | Taiwan Semic... | 0.06 $ | 1800 | DIODE GEN PURP 300V 1A DO... |
ES1FL RUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRUG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHM2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MHG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1F M2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A DO... |
ES1F | ON Semicondu... | -- | 82500 | DIODE GEN PURP 300V 1A SM... |
ES1FLHRHG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RFG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL MTG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RVG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FLHRQG | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
ES1FL RQG | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 300V 1A SU... |
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