ES1FLHM2G Allicdata Electronics
Allicdata Part #:

ES1FLHM2G-ND

Manufacturer Part#:

ES1FLHM2G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 300V 1A SUB SMA
More Detail: Diode Standard 300V 1A Surface Mount Sub SMA
DataSheet: ES1FLHM2G datasheetES1FLHM2G Datasheet/PDF
Quantity: 1000
7500 +: $ 0.05263
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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Diodes - Rectifiers - Single

Introduction of ES1FLHM2G

ES1FLHM2G is a rectifier diode with a built-in resistive element (<200 ohms at IF=2A) is a super low voltage, low current type of varistor diode. The current rating and the pre-breakdown voltage are both super low, so it is most suitable for the peak clamping of small low voltage and low current partial circuits.

Application fields of ES1FLHM2G

The application fields for ES1FLHM2G are relatively wide. Its peak clamping function deals with temporary overloads caused by various reasons such as an instantaneous current, voltage fluctuation terms and static electricity. For example, it is used in communication equipment and home appliance, or in the surge protection circuit in AC adapter, outlet and data line.

Working Principle of ES1FLHM2G

The ES1FLHM2G working principle is similar to other varistors. Its main component is a sintered semiconductor. Its breakdown voltage is determined by the diameter of ITO (Indium tin oxide) particles. The thinner the particle, the lower the breakdown voltage.

When the voltage is below the breakdown voltage UG, the ES1FLHM2G is off and behaves like an open circuit. When the voltage exceeds UG, the varistor becomes conductive and acts like a low resistance instead of an open circuit. As voltage increases, current rises exponentially and reaches its maximum rated current.

The varistor shape of the ES1FLHM2G diode fundamentally changes the characteristics of the diode. It allows the diode to dissipate power effectively, preventing the diode from being damaged due to overheating. The built-in resistive element also helps reduce the current flow to a safe and acceptable level, protecting the varistor from more severe overloads.

The specific data is subject to PDF, and the above content is for reference

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