ES1FLHRFG Allicdata Electronics
Allicdata Part #:

ES1FLHRFG-ND

Manufacturer Part#:

ES1FLHRFG

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: DIODE GEN PURP 300V 1A SUB SMA
More Detail: Diode Standard 300V 1A Surface Mount Sub SMA
DataSheet: ES1FLHRFG datasheetES1FLHRFG Datasheet/PDF
Quantity: 1000
9000 +: $ 0.05263
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Description

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ES1FLHRFG is a type of single rectifier diode with a field-effect transistor (FET) at its core. The device has a wide range of applications, including general-purpose rectification, switching and voltage adjustment. It is also used in AC-DC and DC-DC power conversion, power semiconductor control, solar photovoltaic cell control, and other power supply control applications.

The ES1FLHRFG diode is a very efficient device with a relatively low resistance, which allows it to conduct current more easily than other types of diodes. Its low voltage drop also improves efficiency and reduces power losses, making the ES1FLHRFG diode a popular and reliable choice for various projects. Unlike other diodes, the ES1FLHRFG has a built-in FET and does not require an external FET for its operation. This makes the device much easier to use for switching applications.

The ES1FLHRFG has two main components, namely, the P-N junction and the built-in FET. The P-N junction diode, or rectifier diode, is a semiconductor device with a positive and a negative terminal. When a potential difference is applied to the diode, the P-N junction conducts current. The built-in FET acts as a switch, allowing current to pass through the P-N junction only when a signal is applied. This signal, typically a voltage, is used to turn the FET on or off, thus allowing current to flow. By controlling the FET, the ES1FLHRFG can be used to regulate the amount of current flowing through the device.

Another advantage of the ES1FLHRFG is its reverse recovery time. The reverse recovery time is the amount of time it takes for the diode to switch off after it has been switched on. This is important in applications where the diode must switch quickly. The ES1FLHRFG has a much faster reverse recovery time than other rectifier diodes, allowing it to switch quickly and efficiently.

One example of how the ES1FLHRFG can be used is in solar panel systems. The ES1FLHRFG can be used to control the power flow between the solar panel and the charge controller. By adjusting the FET, the device is able to regulate the amount of current flowing from the panel to the controller. This ensures that the charge controller is not overloaded, which can result in damage to the solar panel. By regulating the power flow, the ES1FLHRFG is able to maximize the efficiency of the system.

The ES1FLHRFG can also be used for AC to DC power conversion. In this process, the alternating current (AC) is converted to direct current (DC). The ES1FLHRFG can be used to switch the output voltage of the AC to the appropriate DC level, ensuring that the device is supplied with the correct power. This makes the ES1FLHRFG ideal for applications such as PCs, phones, and other devices that may require AC to DC conversion.

The ES1FLHRFG is a reliable and efficient diode with a wide range of applications. Its built-in FET makes it easy to use in switching applications, while its high efficiency and reverse recovery time make it an excellent choice for AC to DC power conversion. Its versatility makes the ES1FLHRFG an indispensable component in any electronic design project.

The specific data is subject to PDF, and the above content is for reference

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