
Allicdata Part #: | ES2B/1GI-ND |
Manufacturer Part#: |
ES2B/1 |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
750 +: | $ 0.16285 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2B |
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A Schottky diode is a type of diode commonly used for rectification purposes in low-voltage applications. It has a much lower forward voltage drop than that of a standard PN junction diode and is more resistant to temperature changes and overloading. Because of these properties, Schottky diodes are often used in power rectifier circuits and high-frequency rectifier circuits. In this article we will discuss the applications of Schottky diodes in these fields and explain their working principle.The main application of Schottky diodes is in power rectification circuits, where they are used to convert alternating current (AC) into direct current (DC). The Schottky diode’s low forward voltage drop and high blocking voltage make it ideal for this purpose as it can rectify the AC signal efficiently with minimal power loss. Schottky diodes are also often used in precision rectifier circuits, where their low forward voltage drop and high reliability help to ensure accurate regulation and stability.Another common application of Schottky diodes is to reduce harmonics in power electronic circuits. This is achieved by connecting the Schottky diode from the output of an electronic circuit to its input. As the current flows through the diode, the harmonics present in the output are removed and the resulting waveform is more sinusoidal in shape.The working principle of a Schottky diode can be explained using the band theory of solids. In a normal PN junction diode, the electrons are free to move across the junction, while the holes - positively charged particles - are not. Thus, when current is applied to the PN junction, the electrons cross the junction while the holes are trapped on one side. This causes a voltage drop across the junction which is known as the forward voltage drop.In a Schottky diode, however, electrons cannot move freely across the junction because of the presence of a metal-semiconductor barrier. As a result, when current is applied to the Schottky diode, a voltage drop appears across the junction. This voltage drop is much lower than that of a standard PN junction diode and is known as the Schottky voltage drop. The metal-semiconductor barrier also makes the diode more resistant to overloading and temperature changes than a PN junction diode.In conclusion, Schottky diodes are widely used for power rectification and high frequency rectification purposes due to their low forward voltage drop and high blocking voltage. They are also capable of reducing harmonics in electronic power circuits. The working principle of Schottky diodes can be explained using the band theory of solids. It is this principle that makes them stable and reliable at higher current and voltage levels.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B R5G | Taiwan Semic... | 0.1 $ | 3400 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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