
Allicdata Part #: | ES2BAM2G-ND |
Manufacturer Part#: |
ES2BA M2G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 2A DO214AC |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AC (SMA... |
DataSheet: | ![]() |
Quantity: | 1000 |
15000 +: | $ 0.05896 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The M2G field is an important application field for diode rectifiers. This field involves the use of diodes in electronic systems with the primary goal of rectifying alternating current (AC) into direct current (DC). The principle behind the M2G field is to use a single diode to accomplish this via a process called rectification.
Rectification is a process whereby a diode is used to convert AC into DC current by allowing only one direction of electrical current flow. The rectification process is achieved by placing the diode in a circuit between the line voltage, or alternating current (AC) source, and the load. When the current flow in the AC source reverses direction, as it does many times each second, the direction of the current flowing through the diode changes as well. When this occurs, the diode in the circuit prevents the AC current from flowing in the wrong direction and allows only a direct current (DC) to pass through.
The use of single diodes in the M2G field is advantageous as it eliminates the need to use multiple diode components and wiring. Single diodes also allow for more efficient power transfer and as such, reduce power losses and improve power factor. Additionally, single diodes offer improved reliability with less heat generation and higher currents than what can be achieved with multiple diodes.
In order to select the most suitable single diode for any application, an understanding of its various features is essential. These features include reverse recovery time, reverse voltage, forward voltage drop, surge current capacity, forward and reverse current ratings, total capacitance, and voltage ratings. Additionally, it is important to consider the power and current dissipation of the diode in order to avoid possible damage to the device in the event of an overload.
Single diodes are widely used in the M2G field due to their ability to convert AC to DC with minimal complexity and cost. By using single diodes, system designers can reduce the amount of space, wiring, and materials required, and afford more efficient power transfer. Single diodes offer superior performance and reliability as compared to other diode rectifier technologies, and, therefore, offer users an effective solution for their power conversion requirements.
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Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B R5G | Taiwan Semic... | 0.1 $ | 3400 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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