
Allicdata Part #: | ES2BHE3/5BT-ND |
Manufacturer Part#: |
ES2BHE3/5BT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
0 +: | $ 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
As one of the single rectifiers, ES2BHE3/5BT is widely used in many applications nowadays. This device provides a high level of stability and reliability for customers. It also comes with a variety of features to simplify its use and take into full account the stability, reliability and performance requirements of complex applications.
This device is used in many fields, including power management and communications, automotive, industrial, etc. Power management applications, such as AC/DC and DC/DC converters, use ES2BHE3/5BT to rectify signals and provide electrical power to the system. In communication applications, the device is used to convert alternating current to direct current, providing consistent power to the equipment. Furthermore, it is used in automotive applications to provide reliable and stable power for vehicle systems. In industrial applications, it is used to provide stable power for manufacturing processes that require high voltage.
In essence, ES2BHE3/5BT works in an efficient, low-cost and high-performance way. It can easily convert electrical power from alternate to direct current. The device consists of two diodes connected in parallel to each other. In the conduction direction, the two diodes are in a forward voltage drop state. This allows alternating current to be converted to direct current.
Once the transistor is triggered, the anode-cathode voltage of the device reaches a static equilibrium and current begins to flow through it. At this stage, the maximum forward current will eventually be reached and the maximum forward voltage of the transistor will be established. In this condition, the device functions efficiently and is able to rectify current with a minimum voltage drop.
The device also has high surge capability, which allows it to handle high current loads. It is able to provide very low thermal resistance by taking advantage of its extremely low junction temperature. It is also capable of providing reliable and robust control over current flow. In order to protect the device from failure due to over-current, it has an over-voltage protection feature, which limits the voltage across the diodes.
The device also provides a wide operating temperature range, from -40°C to +125°C. It is also capable of providing excellent efficiency and maximum protection against transient load fluctuations. Furthermore, it is designed for ease of installation and requires minimal maintenance. All these features make the ES2BHE3/5BT a great choice for a variety of applications.
In conclusion, ES2BHE3/5BT is a highly reliable and efficient single rectifier used in many applications. It has high levels of stability and reliability, and its features make it a great choice for power management, automotive, industrial and communication applications. Furthermore, it is easy to install and requires minimal maintenance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B R5G | Taiwan Semic... | 0.1 $ | 3400 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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