
ES2B-E3/52T Discrete Semiconductor Products |
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Allicdata Part #: | ES2B-E3/52TGITR-ND |
Manufacturer Part#: |
ES2B-E3/52T |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2B |
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The ES2B-E3/52T is a single rectifier diode, a special type of diode used to convert AC into DC. This device is one of the most commonly used parts in the regulated power supply system because of its ability to convert low voltage and low current AC to higher voltage and current DC.
The ES2B-E3/52T rectifier diode has many important characteristics. It has a high peak inverse voltage of 1600 volts, meaning that the diode can accept even higher peak inverse voltages and convert them into DC with minimum efficiency loss. This makes the device suitable for a wide range of applications. Also, the device has a low forward voltage drop of 2 volts. This means that it can draw less power from the supply, resulting in high energy efficiency.
The ES2B-E3/52T is most commonly used in regulated power supplies, especially in electronic devices that use AC power. It is also used in high-power and high-voltage applications that require fast switching speeds such as solar installations and inverters. The device can also be used in medical and military applications, where the higher voltage and current can be used to power specialized equipment.
The working principle of the ES2B-E3/52T rectifier diode is relatively simple. When AC is supplied to the device, it acts as a switch, allowing current to flow in one direction only. This means that the device converts AC to DC, which can then be used by the power supply or the device it is connected to. The device is also capable of regulating voltage and current levels, which ensures that devices running on the power supply remain stable.
The ES2B-E3/52T rectifier diode has many advantages over other types of diodes, such as its high peak inverse voltage, low forward voltage drop, and fast switching speed. These features make the device ideal for a variety of applications and are particularly beneficial in high-power, high-voltage applications. The device’s simplicity also makes it a reliable and cost-effective choice for many power supply systems.
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Part Number | Manufacturer | Price | Quantity | Description |
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ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B R5G | Taiwan Semic... | 0.1 $ | 3400 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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