
Allicdata Part #: | ES2BM4G-ND |
Manufacturer Part#: |
ES2B M4G |
Price: | $ 0.08 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
6000 +: | $ 0.06737 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 950mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 35ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 25pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Description
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Introduction
Diodes are semiconductor devices used for their ability to conduct current in one direction. They can be used for rectification, i.e. conversion of alternating current (AC) to direct current (DC). As such, they are particularly useful for applications that require a high power or current rating such as automotive, communications and industrial applications. Among these, the single diodes are the most common type used due to their economical, easy to install and maintenance-free characteristics.The next generation of diodes, known as ES2B M4G, is designed to provide improved performance, while still maintaining the same high power and current ratings. This new diodes use advanced technologies, such as selective laser-based welding, to offer superior mechanical stability, electrical performance and lower power consumption. ES2B M4G diodes are designed for superior surge voltage and temperature tolerance, which enables them to serve a broad range of applications including automotive, communications, industrial and consumer sectors.ES2B M4G Application Field and Working Principle
ES2B M4G diodes are single-diode rectifiers, meaning that they are able to convert alternating current into direct current, called rectification. By allowing current to flow only in one direction, these diodes are used in both AC-to-DC and DC-to-DC power supplies and converters. In addition, these diodes can be used for protection against overload surges and reverse-current flow, as well as voltage division, as a clamping device, or even as a source of negative voltages.The main principle behind the design of ES2B M4G diodes is to offer improved performance while maintaining the same high current and power ratings. This is achieved by employing advanced technologies such as selective laser-based welding to join the anode and cathode connections together. This ensures better electrical performance due to lower contact resistance, as well as better mechanical stability and improved surge voltage tolerance.At the same time, the use of modern technology in the manufacturing process of ES2B M4G diodes reduces their power consumption significantly. This is achieved by the implementation of improved material science processes such as Vacuum Annealing, Thermal Profiling, and Ion Implantation. Thanks to these process improvements, ES2B M4G is rated to be 30-50% more efficient than its predecessors, while consuming only 30 mW/A of power.Conclusion
ES2B M4G diodes are the latest generation of single-diode rectifiers designed to offer improved efficiency and performance, while still maintaining the same high power and current ratings. By employing advanced technologies such as selective laser-based welding, Vacuum Annealing, Thermal Profiling, and Ion Implantation for its manufacturing process, these diodes are able to provide superior mechanical stability, electrical performance and lower power consumption. As such, they are ideal for a variety of applications, including automotive, communications, industrial and consumer sectors.The specific data is subject to PDF, and the above content is for reference
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ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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