ES2B-13-F

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ES2B-13-F Diodes – Rectifiers – Single are high power rectifying units. These devices are primarily used in the power conversion, rectification, and switching applications. The rectifiers offer superior performance and reliability over standard rectifying diodes.

ES2B-13-F provides a high degree of standardization and a wide range of voltage ratings. It has a diode reverse-recovery, avalanche and transient characteristics. The unit consists of two levels of integrated circuits, each being series of PN junctions. The first layer consists of three stages with a series of diodes and the second layer consists of two stages with a series of transistors.

The high voltage and current ratings for the ES2B-13-F make it suitable for many power switching and conversion applications. These rectifiers can be used for rectifying AC and DC power, converting AC to DC power, and rectifying current in high power applications. The rectifiers can handle a range of frequencies from low frequency through to high frequency. The maximum current rating for each diode depends on the junction temperature, power dissipation and the diode size.

The devices typically work by conducting current when the voltage on both sides of the device is in one direction and blocking current when the voltage reverses. The device has a minimum on-resistance, which provides the rectifier with an enhanced reverse-recovery characteristics. This characteristic avoids excessive power losses during the reverse cycle. The device also has a low forward voltage drop, which helps to reduce power losses in the forward direction.

The ES2B-13-F is designed to withstand high temperature and high voltages, which makes them ideal for high power applications. The devices offer excellent temperature protection due to their high temperature resistant insulation materials. The lower junction temperatures of the rectifier ensures higher efficiency and improved life-span of the device. The higher junction temperature also helps to minimize reverse leakage current.

The working principle of the ES2B-13-F is based on the conduction characteristics of PN junctions. When the voltage is applied across the PN junction, charge carriers are derived from the negative and the positive areas of the PN junction. These flow towards the applied voltage and the current will flow in process. The device also has a reverse-recovery or “snapback” feature which helps to avoid power losses during the reverse cycle. This is done by rapidly reducing the reverse current when the voltage is applied in the opposite direction.

The ES2B-13-F is a highly efficient, reliable and cost-effective solution for many power conversion, rectification and switching applications. The devices are well suited for applications where high temperature and high voltages must be tolerated. The devices offer a high degree of standardization, excellent temperature protection and low forward voltage drop features making them an ideal choice for high power applications.

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