
Allicdata Part #: | ES2B-M3/5BT-ND |
Manufacturer Part#: |
ES2B-M3/5BT |
Price: | $ 0.09 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ![]() |
Quantity: | 1000 |
12800 +: | $ 0.08019 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 30ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes, also known as rectifier diodes, are a type of electrical component that allows current to flow unidirectionally from a positive to a negative end. In other words, they are used to convert AC (alternating current) signals into DC (direct current) signals. Single diodes are the most basic type of diode and can be used to protect circuits against overloads, stabilize power supplies and to modulate signals. The ES2B-M3/5BT is an example of single rectifier diodes.
The ES2B-M3/5BT is suitable for applications such as switching power supplies and DC-DC converters, general rectification, and snubber circuits due to its specialized properties such as its high surge current capability, lower forward voltage drop, and low leakage current. The ES2B-M3/5BT has a maximum forward current rating of 2.5A, a reverse voltage rating of 5V, and a maximum forward voltage drop of 0.7V. It is available in two package types, TO-220 and D-PAK.
The working principle of a diode is relatively simple. When voltage is applied to the diode in the positive direction, the diode conducts current in the forward direction, allowing current to flow from the anode to the cathode of the diode. This process is called forward conduction. When voltage is applied to the diode in the negative direction, the diode acts as an insulator and does not allow current to flow from the anode to the cathode. This process is called reverse conduction. Using this working principle, the ES2B-M3/5BT can be used to rectify AC signals and to protect circuits by ensuring that current only flows in one direction.
The ES2B-M3/5BT is designed with a guarded construction to provide excellent protection against transient energy. It is also designed to have high stability and reliability with a pulsed reverse avalanche expression that ensures maximum dynamic dv/dt capabilities and breakdown voltage ratings. With low thermal resistance, the ES2B-M3/5BT can also withstand high temperatures without sacrificing performance.
In conclusion, the ES2B-M3/5BT diode is an ideal single rectifier diode for applications such as switching power supplies and DC-DC converters. It is designed for excellence with features such as a high surge current capability and excellent protection against transient energy. With its low thermal resistance and low forward voltage drop, the ES2B-M3/5BT can operate at high temperatures without sacrificing performance.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B R5G | Taiwan Semic... | 0.1 $ | 3400 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2B-TP | Micro Commer... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHM4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BAHM2G | Taiwan Semic... | 0.07 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
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