Allicdata Part #: | ES2BFSTR-ND |
Manufacturer Part#: |
ES2B |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE GEN PURP 100V 2A DO214AA |
More Detail: | Diode Standard 100V 2A Surface Mount DO-214AA (SMB... |
DataSheet: | ES2B Datasheet/PDF |
Quantity: | 6000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 100V |
Current - Average Rectified (Io): | 2A |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 2A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 20ns |
Current - Reverse Leakage @ Vr: | 10µA @ 100V |
Capacitance @ Vr, F: | 18pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AA, SMB |
Supplier Device Package: | DO-214AA (SMB) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | ES2B |
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The emerging field of ES2B technology has been gaining widespread traction due to its ability to offer a high level of protection against voltage spikes and power surges. The technology works by incorporating a pair of closely spaced thyristors (SCRs) in a single package that provides efficient power conversion. The two thyristors are typically connected in anti-parallel to prevent any current flow until a certain voltage has been reached. At that point, the two thyristors will conduct in both directions at the same time, providing a regulated and steady voltage. ES2B technology has been widely used in a range of applications, from power supplies and telecommunications systems to automotive and industrial applications.
A single ES2B is composed of two thyristors connected in anti-parallel, and is referred to as a single-stage ES2B (SES2B) or a dual-stage ES2B (DES2B). In SES2B, the thyristors are connected in ant-parallel and act together, while in DES2B the thyristors are independently connected to each other and act separately. This allows ES2B devices to perform several protective functions, such as reducing stress in circuits and protecting against overvoltages and overcurrents.
The working principle behind ES2B technology is based on the fact that thyristors are bidirectional, which means they can switch current in either direction. When a single ES2B is connected to a power source, the thyristors in the ES2B can sense the current flowing through the circuit and, depending on the condition of the circuit, will either allow or block it. If the current is too high, the thyristors in the ES2B will conduct, forming a bridge between the source and the device being protected. This reduces the amount of current being drawn from the power source, allowing for the transfer of a controlled and regulated voltage.
Another important feature offered by ES2B technology is its ability to provide protection against transient overvoltages. When exposed to high voltages, the thyristors in the ES2B will open, preventing current flow until the voltage drops below a certain threshold. This allows the device to be safely operated in high-voltage environments without risk of damage.
ES2B technology has a wide range of potential applications, particularly in automotive and industrial applications where effective protection against transient overvoltages is essential. In addition, the ES2B can also be used in telecommunications systems, power supplies and medical equipment. With its high levels of reliability and more efficient use of electricity, ES2B technology promises to be an increasingly important part of the electronics industry in the coming years.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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ES2B/1 | Vishay Semic... | 0.18 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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ES2BAHR3G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B M4G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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ES2BHR5G | Taiwan Semic... | 0.08 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/5BT | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-M3/52T | Vishay Semic... | 0.09 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/5BT | Vishay Semic... | 0.1 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/I | Vishay Semic... | 0.13 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3_A/H | Vishay Semic... | 0.21 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B | ON Semicondu... | -- | 6000 | DIODE GEN PURP 100V 2A DO... |
ES2B-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2BA-13 | Diodes Incor... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A SM... |
ES2BHE3/5BT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-LTP | Micro Commer... | 0.06 $ | 5000 | DIODE GEN PURP 100V 2A DO... |
ES2BA-13-F | Diodes Incor... | -- | 135000 | DIODE GEN PURP 100V 2A SM... |
ES2B-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 100V 2A SM... |
ES2BA R3G | Taiwan Semic... | 0.07 $ | 1800 | DIODE GEN PURP 100V 2A DO... |
ES2BA M2G | Taiwan Semic... | 0.06 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2B-E3/52T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 100V 2A DO... |
ES2BHE3/52T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 100V 2A DO... |
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