Allicdata Part #: | FCP11N60N-F102-ND |
Manufacturer Part#: |
FCP11N60N-F102 |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 600V 10.8A TO220F |
More Detail: | N-Channel 600V 10.8A (Tc) 94W (Tc) Through Hole TO... |
DataSheet: | FCP11N60N-F102 Datasheet/PDF |
Quantity: | 1000 |
800 +: | $ 1.12193 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220F |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 94W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1505pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35.6nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 299 mOhm @ 5.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 10.8A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP11N60N-F102 is a type of single, insulated-gate bipolar junction (IGBT) transistor, which is a power semiconductor device that combines the properties of an insulated-gate field-effect transistor (MOSFET) and a bipolar junction transistor (BJT). IGBTs have high input impedance and output current capabilities, making them suitable for use in power electronics applications. The FCP11N60N-F102 has a maximum voltage rating of 600V and a maximum current rating of 11A.
The FCP11N60N-F102 is manufactured using the NPN process, which is a form of lateral power MOSFET manufacturing. This process uses an insulated gate to control the flow of electric current. The FCP11N60N-F102 has three leads, the base (or gate), the emitter, and the collector.
The FCP11N60N-F102 is designed for use in high voltage, high frequency switching applications. It can be used in such applications as a DC-DC converter, an inverter, a motor controller, or a switch mode power supply. It can be used in industrial and automotive applications. It is particularly useful in high power devices such as power converters and inverters.
The working principle of the FCP11N60N-F102 is similar to that of other IGBTs. A gate voltage is applied between the gate and the source, which creates an electric field between the gate and the source. This field then affects the current flowing through the transistor. The gate voltage controls the on/off switch of the device, allowing it to be used as a switch mode power supply.
When the gate voltage is high, the current flows _from_ the source to the drain. This is referred to as the “on-state” of the device. When the gate voltage is low, the current does not flow and the device is said to be “off”. This allows the FCP11N60N-F102 to switch between two power states.
The FCP11N60N-F102 also has a built-in protection feature. This feature is called the overload protection. When the current flowing through the transistor exceeds a certain limit, the device will turn itself off to prevent damage. This feature ensures that the device is protected from electrical overloads.
The FCP11N60N-F102 is an ideal choice for use in high power switching applications. It is a high voltage device with a low on-state voltage drop and low switching losses. Its built-in protection features ensure that it can safely operate in high voltages and high frequency switching applications. It is also very reliable and efficient for use in industrial, automotive, and other applications.
The specific data is subject to PDF, and the above content is for reference
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