FCP190N65S3R0

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The FCP190N65S3R0 MOSFET is a components that is suitable for a wide number of applications including power management, aerospace, automotive and industrial applications. The FCP190N65S3R0 is not only a low on-resistance MOSFET but also has a very low drain-to-source capacitance. It also has a fast switching speed suitable for high frequency applications.

The FCP190N65S3R0 MOSFET is a single die N-channel enhancement mode Field-effect transistor (FET). It is constructed on an insulated-gate structure which provides excellent performance in applications which require fast switching, low static on-resistance and high load current capability. The design of this MOSFET is optimized for applications in the automotive and industrial sectors.

The FCP190N65S3R0 MOSFET is fabricated using the company’s proprietary advanced design process which utilizes the latest fabrication technology. This process produces a device which is enhanced with very low on-resistance, reduce capacitance and higher reliability.

The FCP190N65S3R0 MOSFET is designed to operate and withstand high voltage, enabling a power supply to maintain a steady current and prevent circuit shutdowns. It has a drain-to-source voltage rating of up to 650V, a drain current of up to 190A and a contact resistance of 1.0 milliohm. This wide range of voltages and currents makes this FET suitable for a variety of applications requiring high performance.

The FCP190N65S3R0 MOSFET is characterized by its fast switching speeds. With a maximum switching frequency of 50KHz, it is able to quickly switch on and off very effectively, reducing the power losses associated with low frequency devices. In applications where efficiency and power consumption is important, this Low On-Resistance (LOR) MOSFET is more suitable than standard power MOSFETs.

The working principle of the FCP190N65S3R0 is based on the field-effect. It utilizes the field effect which is created by the voltage applied to its gate to control the flow of electrons between its source and drain terminals. A voltage (VGS) is applie to its gate terminal, which generates an electric field and modulates the current flow between the source and drain terminals, resulting in current conduction from the drain to the source. The drain current is proportional to the voltage applied to its gate, allowing the FCP190N65S3R0 MOSFET to be used as a voltage-controlled current repeater or amplifier in a wide range of applications.

In summary, the FCP190N65S3R0 is a single die N-channel enhancement mode Field-effect transistor (FET). It is suitable for applications requiring fast switching, low static on-resistance and high load current capability thanks to its advanced design and manufacturing process. Moreover, its low on-resistance and high switching frequencies make it suitable for applications requiring power efficiency. Finally, the FCP190N65S3R0 is easy to control and has a wide range of voltages and currents, making it suitable for a wide range of applications.

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