FCP125N60E Allicdata Electronics
Allicdata Part #:

FCP125N60E-ND

Manufacturer Part#:

FCP125N60E

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 600V 29A TO220
More Detail: N-Channel 600V 29A (Tc) 278W (Tc) Through Hole TO-...
DataSheet: FCP125N60E datasheetFCP125N60E Datasheet/PDF
Quantity: 642
Stock 642Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 278W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2990pF @ 380V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 95nC @ 10V
Series: SuperFET® II
Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCP125N60E is a member of the nexFET N-channel Power MOSFET family. This product offers a low gate charge, minimal on-state resistance, and a strong gate oxide. It offers an endless list of design opportunities, making it a popular choice for various applications.

The FCP125N60E is most commonly used in very high frequency DC-DC switch-mode power supplies for notebook computers, telecom and industrial applications. This device is well suited for use as a synchronous rectifier in these applications because of its low output capacitance and low gate charge. It offers great performance with low on-state resistance, low gate threshold voltage variation, minimal noise and minimal interface with external circuitry.

The FCP125N60E is an N-channel MOSFET that works by having the gate drive voltage control the channel current, which can flow from the drain to the source. The FCP125N60E is a depletion-mode (normally-on) MOSFET and operates as a closed switch until the gate-to-source voltage exceeds the threshold voltage (VGS(th)). As the gate-to-source voltage approaches the VGS(th) voltage, the MOSFET begins to turn off and the drain-to-source current begins to decrease rapidly.

The FCP125N60E offers excellent on-state performance, with a low Qg charge of 125nC and a low RDS(on) of 0.060Ω. It also offers a wide operating temperature range of -55°C to 175°C, which allows it to work reliably in a variety of operating conditions. Aside from its high-performance features, the FCP125N60E also offers impressive flexibility, as it can be used in both bulk and small-scale applications.

The FCP125N60E is designed to offer a cost-effective solution that doesn’t compromise on performance. It has a maximum drain-to-source voltage of 120V and a maximum drain current of 120A, making it a suitable choice for applications such as high-frequency DC-DC switch-mode power supplies and synchronous rectifiers. It also has a low gate-threshold voltage of just 4 Volts, which provides reliable switching characteristics in low-voltage applications.

The FCP125N60E can be used in a variety of applications due to its high performance, low cost, and wide operating temperature range. It is ideal for use in high-frequency DC-DC switch-mode power supplies and synchronous rectifiers where low on-state resistance and low gate charge are required. Additionally, its wide operating temperature range makes it suitable for use in a variety of operating conditions.

The FCP125N60E is a great choice for use in high-frequency DC-DC switch-mode power supplies and synchronous rectifiers due to its low on-state resistance and low gate charge, as well as its wide operating temperature range. Additionally, its low gate-threshold voltage makes it suitable for low-voltage applications. This device provides a cost-effective solution without compromising on performance, making it a popular choice for various applications.

The specific data is subject to PDF, and the above content is for reference

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