
Allicdata Part #: | FCP190N65F-ND |
Manufacturer Part#: |
FCP190N65F |
Price: | $ 2.84 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 20.6A TO220-3 |
More Detail: | N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole T... |
DataSheet: | ![]() |
Quantity: | 392 |
1 +: | $ 2.84000 |
10 +: | $ 2.75480 |
100 +: | $ 2.69800 |
1000 +: | $ 2.64120 |
10000 +: | $ 2.55600 |
Vgs(th) (Max) @ Id: | 5V @ 2mA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 208W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3225pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 78nC @ 10V |
Series: | FRFET®, SuperFET® II |
Rds On (Max) @ Id, Vgs: | 190 mOhm @ 10A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 20.6A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The FCP190N65F is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from Fairchild Semiconductor. It is a type of single Mosfet, with an effective channel width of 190nm. It has a threshold voltage of 5V and an effective gate to source voltage of -18V with a maximum drain to source voltage of -650V.
This type of Mosfet is used for many applications, including motor control, audio amplification, power control, and other types of power management, such as variable speed or power conversion. These applications require high-speed switching, which is provided by the low on-resistance of FCP190N65F. It also has a high transition frequency, which means it can switch faster than other types of Mosfets, making it an ideal choice for many power electronics applications.
The FCP190N65F, like all MOSFETs, works on a principle of capacitive charge transfer. A gate oxide layer separates the source and drain terminals of the transistor. When a voltage is applied to the gate, it modifies the threshold voltage of the device, allowing current to flow from the source to the drain. As the voltage on the gate increases, the current increases exponentially, and the device can switch between conducting and non-conducting states very quickly.
In addition, the FCP190N65F has a low gate charge and low gate to drain capacitance, making it more efficient than other MOSFETs. This further increases its performance in power management applications, as it reduces switching losses and increases the overall power efficiency. The device is also protected against electrostatic discharge, making it less likely to be damaged in the event of an electrical surge.
Overall, the FCP190N65F is an excellent choice for high-speed switching or power management applications. Its low on-resistance, high transition frequency, low gate charge, and low gate to drain capacitance make it an ideal device for many different types of applications. With its protection against electrostatic discharge, it is suitable for use in high-power environments, making it a great choice for both industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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