FCP190N65F Allicdata Electronics
Allicdata Part #:

FCP190N65F-ND

Manufacturer Part#:

FCP190N65F

Price: $ 2.84
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET N-CH 650V 20.6A TO220-3
More Detail: N-Channel 650V 20.6A (Tc) 208W (Tc) Through Hole T...
DataSheet: FCP190N65F datasheetFCP190N65F Datasheet/PDF
Quantity: 392
1 +: $ 2.84000
10 +: $ 2.75480
100 +: $ 2.69800
1000 +: $ 2.64120
10000 +: $ 2.55600
Stock 392Can Ship Immediately
$ 2.84
Specifications
Vgs(th) (Max) @ Id: 5V @ 2mA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 208W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3225pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Series: FRFET®, SuperFET® II
Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The FCP190N65F is a type of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) from Fairchild Semiconductor. It is a type of single Mosfet, with an effective channel width of 190nm. It has a threshold voltage of 5V and an effective gate to source voltage of -18V with a maximum drain to source voltage of -650V.

This type of Mosfet is used for many applications, including motor control, audio amplification, power control, and other types of power management, such as variable speed or power conversion. These applications require high-speed switching, which is provided by the low on-resistance of FCP190N65F. It also has a high transition frequency, which means it can switch faster than other types of Mosfets, making it an ideal choice for many power electronics applications.

The FCP190N65F, like all MOSFETs, works on a principle of capacitive charge transfer. A gate oxide layer separates the source and drain terminals of the transistor. When a voltage is applied to the gate, it modifies the threshold voltage of the device, allowing current to flow from the source to the drain. As the voltage on the gate increases, the current increases exponentially, and the device can switch between conducting and non-conducting states very quickly.

In addition, the FCP190N65F has a low gate charge and low gate to drain capacitance, making it more efficient than other MOSFETs. This further increases its performance in power management applications, as it reduces switching losses and increases the overall power efficiency. The device is also protected against electrostatic discharge, making it less likely to be damaged in the event of an electrical surge.

Overall, the FCP190N65F is an excellent choice for high-speed switching or power management applications. Its low on-resistance, high transition frequency, low gate charge, and low gate to drain capacitance make it an ideal device for many different types of applications. With its protection against electrostatic discharge, it is suitable for use in high-power environments, making it a great choice for both industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

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