Allicdata Part #: | FCP125N65S3-ND |
Manufacturer Part#: |
FCP125N65S3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 650V 125MOHM TO220 |
More Detail: | N-Channel 650V 24A (Tc) 181W (Tc) Through Hole TO-... |
DataSheet: | FCP125N65S3 Datasheet/PDF |
Quantity: | 1000 |
Gate Charge (Qg) (Max) @ Vgs: | 46nC @ 10V |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 181W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1940pF @ 400V |
Vgs (Max): | ±30V |
Series: | SuperFET® III |
Vgs(th) (Max) @ Id: | 4.5V @ 2.4mA |
Rds On (Max) @ Id, Vgs: | 125 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
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The FCP125N65S3 is a trench style field effect transistor (FET) made using ON Semiconductor\'s advanced UltraFET process. It is designed to be used as a high voltage, low on-resistance switch in power conversion, motor control, and automotive applications as well as consumer, industrial and telecommunication applications. As with most FETs, the high input impedance and low operating current of the FET makes it suitable for switching applications where power conversion and control is required.
The FCP125N65S3 is a single N-Channel FET, meaning that it is able to control the current flowing between its drain and source by applying a voltage to its gate. This makes it ideal for use in voltage regulation and current control as it can act as either a high side or a low side switch depending on how it is used. The FCP125N65S3 features a Trench-stable technology that enables operation over an extended voltage range. It also features an ESD rating of Class IV, making it an ideal choice for applications requiring enhanced ESD protection.
The FCP125N65S3 is capable of delivering a maximum drain-source breakdown voltage of 1200V, making it suitable for high voltage applications. It also features a low gate charge of just 8.5nC which helps to reduce switching losses. As well as this, the FCP125N65S3 has a maximum drain-source on resistance of just 125mΩ making it an excellent choice for applications where space and power savings are of critical importance.
The FCP125N65S3 is typically used in power converter applications such as in uninterruptible power suppliers (UPS), power inverters, DC-DC converters, and motor control. Its low drain-source resistance and high voltage rating makes it particularly suited for applications in these areas, where power savings and efficient switching are of utmost importance. It is also suitable for use in automotive applications as its high voltage, low resistance, and ESD ratings make it suitable for use in many different types of vehicle systems.
In conclusion, the FCP125N65S3 is an excellent choice for applications where power conversion, current control, and voltage regulation are necessary. Its high voltage, low drain-source resistance, low gate charge, and ESD protection rating make it an ideal choice for use in many different types of applications and automotive systems. Its Trench-Stable technology also ensures that it is capable of operating over extended voltage ranges, making it a useful tool for many high voltage application designs.
The specific data is subject to PDF, and the above content is for reference
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