FDA16N50-F109

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3PN
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	205W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1945pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	45nC @ 10V
Series:	UniFET™
Rds On (Max) @ Id, Vgs:	380 mOhm @ 8.3A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	16.5A (Tc)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction:

The FDA16N50-F109 is a single-gate field-effect transistor (FET) designed for high performance applications in consumer, automotive, automotive body, and audio/video electronics. It is capable of operating at frequencies up to 500kHz and is capable of being driven by voltages up to 16V. This field-effect transistor is rated for 16 Amperes of continous drain current and is suitable for use in power management applications.

Construction and Packaging:

The FDA16N50-F109 is a one-gate field-effect transistor (FET) that is encapsulated in a P-channel plastic power package with a bottom side drain. The FET family is constructed with a double polysilicon gate process, a ballast resistor, a source-drain dielectric field plate, a large switching speed, and can handle large amounts of continuous drain current. The package features a heatsink, leadframe, source-drain contacts, and integrated silicons.

Working Principle:

The FDA16N50-F109 works on the principle of field effect transistor (FET) which utilizes the field between gate and source-drain electrodes to carry out its main task of switching. The single-gate FET provides an input-sensitive channel between source and drain in the presence of gate bias and current. The device is designed with a double polysilicon gate process, a ballast resistor, a source-drain dielectric field plate, and a large switching speed.When gate bias voltage is applied, the deeply doped source-drain junction between gate and source forms an inversion layer which affects the current conduction through the channel. This effect is known as the channel modulation effect. The electric field between gate and source-drain is responsible for modulation of the channel conduction. The more negative the gate voltage, the greater the control over channel conduction. The control of channel conduction by the gate voltage allows for linear current transfer characteristics.The FDA16N50-F109 device allows for a wide range of possible operating currents and is suitable for low-noise, high-power applications. The device operates at very low current densities and is integrated with an on-off switch function at a certain gate voltage.

Applications:

The FDA16N50-F109 is suitable for use in applications such as power management and automotive systems, which require low-noise, high-power switching. The device offers a wide operating temperature range, low gate drive requirements, and can be used in a variety of operating conditions.The FDA16N50-F109 can be used to regulate current in various power converters like boost, step-up, and buck converters. It also has applications in motor controls, switching converters, and load switches. The device is suitable for use in low-power audio, video, and industrial applications, where high-performance switching can be utilized to its fullest.The single-gate FET can also be used in analog and digital switching of power supplies and automotive body, providing controlled output signals for continuous tracking of system status and functionality. It is also suitable for use in drones and remote-controlled vehicles, enabling fast, safe, and reliable operation.

Conclusion:

The FDA16N50-F109 single-gate FET is designed for high performance applications in consumer, automotive, automotive body, and audio/video electronics. It is capable of operating at frequencies up to 500kHz, can be driven by voltages up to 16V and is rated for 16 Amperes of continous drain current. The device is integrated with an on-off switch function at a certain gate voltage and features a wide operating temperature range. The FDA16N50-F109 is suitable for use in motor controls, switching converters, and low-power audio, video, and industrial applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description