Allicdata Part #: | FDA16N50-ND |
Manufacturer Part#: |
FDA16N50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 500V 16.5A TO-3P |
More Detail: | N-Channel 500V 16.5A (Tc) 205W (Tc) Through Hole T... |
DataSheet: | FDA16N50 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-3P-3, SC-65-3 |
Supplier Device Package: | TO-3PN |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 205W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1945pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 45nC @ 10V |
Series: | UniFET™ |
Rds On (Max) @ Id, Vgs: | 380 mOhm @ 8.3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 16.5A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The FDA16N50 is a high-voltage field-effect transistor (FET) that is commonly found in applications such as computers, power amplifiers, telecom systems, and automotive applications. This type of transistor is also referred to as an N-channel enhancement-mode Insulated-Gate Bipolar Transistor (IGBT). It functions as a two-terminal device with an N-channel semiconductor body. It is an important component in the design of analog circuits as it provides linear operation and high-frequency operation.
The FET has a gate terminal that is used to control the flow of electrons between the drain and the source terminals, and the voltage on the gate terminal is used to activate or deactivate the current flow. When the gate voltage is applied, a thin layer of negative charge carriers is formed at the interface between the substrate and the semiconductor. This layer is known as the space charge region and its presence influences the electrical properties of the FET.
When the voltage on the gate terminal is increased above the threshold voltage, this layer conducts more easily between the drain and source terminals, thus allowing a controlled flow of current. Conversely, when the voltage on the gate is decreased, the drain-source current flow is inhibited. This process is referred to as voltage gating.
FDA16N50 transistors can be found in a variety of applications, including power amplifiers, voltage regulators, and motor controls. These devices are also commonly used in high voltage switching applications, such as in automotive powertrain control systems. The high-voltage capability of the device makes it an ideal choice for high-voltage systems where it can be used to switch between high-voltage potentials.
In motor controls, FETs such as the FDA16N50 can be used to provide high-speed switching in a motor’s control circuit. This type of device is often used in applications requiring fast switching speeds and high-voltage capabilities. For example, these devices can be used in brushless motors to control the direction of rotation.
In many applications, FDA16N50 transistors are often used in conjunction with other components, such as resistors, capacitors, and diodes, to form more complex circuit topologies. For example, in a switching power supply, a resistor-capacitor network can be used to filter the voltage before it is applied to the FET. This type of filtering can help reduce high-frequency noise, ripple, and other non-linearities in the power supply.
In summary, the FDA16N50 is a high-voltage N-channel enhancement-mode insulated-gate bipolar transistor (FET). It is commonly used in high-voltage switching applications such as automotive powertrain control systems, and motor control circuits. It is also frequently used in combination with other components in complex circuits for high-speed switching, filtering, and noise suppression.
The specific data is subject to PDF, and the above content is for reference
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